Abstract
An exclusive advantage of semiconductor spintronics is its potential for opto-spintronics, which will allow integration of spin-based information processing/storage with photon-based information transfer/communications. Unfortunately, progress has so far been severely hampered by the failure to generate nearly fully spin-polarized charge carriers in semiconductors at room temperature. Here we demonstrate successful generation of conduction electron spin polarization exceeding 90% at room temperature without a magnetic field in a non-magnetic all-semiconductor nanostructure, which remains high even up to 110 °C. This is accomplished by remote spin filtering of InAs quantum-dot electrons via an adjacent tunnelling-coupled GaNAs spin filter. We further show that the quantum-dot electron spin can be remotely manipulated by spin control in the adjacent spin filter, paving the way for remote spin encoding and writing of quantum memory as well as for remote spin control of spin–photon interfaces. This work demonstrates the feasibility to implement opto-spintronic functionality in common semiconductor nanostructures.
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References
Wolf, S. A. Spintronics: a spin-based electronics vision for the future. Science 294, 1488–1495 (2001).
Žutić, I., Fabian, J. & Das Sarma, S. Spintronics: fundamentals and applications. Rev. Mod. Phys. 76, 323–410 (2004).
Awschalom, D. D. & Flatté, M. E. Challenges for semiconductor spintronics. Nature Phys. 3, 153–159 (2007).
Dietl, T., Awschalom, D. D., Kaminska, M. & Ohno, H. Spintronics (Academic, 2008).
Chappert, C., Fert, A. & Nguyen Van Dau, F. The emergence of spin electronics in data storage. Nat. Mater. 6, 813–823 (2007).
Parkin, S. S., Hayashi, M. & Thomas, L. Magnetic domain-wall racetrack memory. Science 320, 190–194 (2008).
Tombros, N., Jozsa, C., Popinciuc, M., Jonkman, H. T. & van Wees, B. J. Electronic spin transport and spin precession in single graphene layers at room temperature. Nature 448, 571–574 (2007).
Gurram, M., Omar, S. & Wees, B. Jvan Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures. Nat. Commun. 8, 248 (2017).
Song, T. et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 360, 1214–1218 (2018).
Javadi, A. et al. Spin–photon interface and spin-controlled photon switching in a nanobeam waveguide. Nat. Nanotechnol. 13, 398–403 (2018).
Luo, Z. et al. A spin–photon interface using charge-tunable quantum dots strongly coupled to a cavity. Nano Lett. 19, 7072–7077 (2019).
Berezovsky, J. et al. Nondestructive optical measurements of a single electron spin in a quantum dot. Science 314, 1916–1920 (2006).
Commercial and industrial grade products. Cactus Technologies https://www.cactus-tech.com/wp-content/uploads/2019/03/Commercial-and-Industrial-Grade-Products.pdf (2019).
Jonker, B. T. et al. Quantifying electrical spin injection: component-resolved electroluminescence from spin-polarized light-emitting diodes. Appl. Phys. Lett. 79, 3098–3100 (2001).
Fiederling, R. et al. Injection and detection of a spin-polarized current in a light-emitting diode. Nature 402, 787–790 (1999).
Hanbicki, A. T., Jonker, B. T., Itskos, G., Kioseoglou, G. & Petrou, A. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Appl. Phys. Lett. 80, 1240–1242 (2002).
Zhu, H. J. et al. Room-temperature spin injection from Fe into GaAs. Phys. Rev. Lett. 87, 016601 (2001).
Jiang, X. et al. Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100). Phys. Rev. Lett. 94, 056601 (2005).
Cadiz, F. et al. Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field. Nano Lett. 18, 2381–2386 (2018).
Dash, S. P., Sharma, S., Patel, R. S., de Jong, M. P. & Jansen, R. Electrical creation of spin polarization in silicon at room temperature. Nature 462, 491–494 (2009).
Dong, X. Y. et al. Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As/GaAs heterostructures. Appl. Phys. Lett. 86, 102107 (2005).
Ramsteiner, M. et al. Co2FeSi/GaAs/(Al,Ga)As spin light-emitting diodes: competition between spin injection and ultrafast spin alignment. Phys. Rev. B 78, 121303 (2008).
Chen, J.-Y., Wong, T.-M., Chang, C.-W., Dong, C.-Y. & Chen, Y.-F. Self-polarized spin-nanolasers. Nat. Nanotechnol. 9, 845–850 (2014).
Chen, J. Y. et al. Efficient spin-light emitting diodes based on ingan/gan quantum disks at room temperature: a new self-polarized paradigm. Nano Lett. 14, 3130–3137 (2014).
Kroutvar, M. et al. Optically programmable electron spin memory using semiconductor quantum dots. Nature 432, 81–84 (2004).
Urbaszek, B. et al. Efficient dynamical nuclear polarization in quantum dots: temperature dependence. Phys. Rev. B 76, 201301 (2007).
Beyer, J., Buyanova, I. A., Suraprapapich, S., Tu, C. W. & Chen, W. M. Strong room-temperature optical and spin polarization in InAs/GaAs quantum dot structures. Appl. Phys. Lett. 98, 203110 (2011).
Zhu, B., Zeng, H., Dai, J., Gong, Z. & Cui, X. Anomalously robust valley polarization and valley coherence in bilayer WS2. Proc. Natl Acad. Sci. USA 111, 11606–11611 (2014).
Dhall, R. et al. Strong circularly polarized photoluminescence from multilayer MoS2 through plasma driven direct-gap transition. ACS Photon. 3, 310–314 (2016).
Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490–493 (2012).
Kalevich, V. K. et al. Spin-dependent electron dynamics and recombination in GaAs1−xNx alloys at room temperature. JETP Lett. 85, 174–178 (2007).
Wang, X. J. et al. Room-temperature defect-engineered spin filter based on a non-magnetic semiconductor. Nat. Mater. 8, 198–202 (2009).
Puttisong, Y., Buyanova, I. A. & Chen, W. M. Limiting factor of defect-engineered spin-filtering effect at room temperature. Phys. Rev. B 89, 195412 (2014).
Chen, S. et al. Room-temperature polarized spin–photon interface based on a semiconductor nanodisk-in-nanopillar structure driven by few defects. Nat. Commun. 9, 3575 (2018).
Meier, F., Zakharchenya, B. P. Optical Orientation (North Holland, 1984).
Awschalom, D. D., Bassett, L. C., Dzurak, A. S., Hu, E. L. & Petta, J. R. Quantum spintronics: engineering and manipulating atom-like spins in semiconductors. Science 339, 1174–1179 (2013).
Senellart, P., Solomon, G. & White, A. High-performance semiconductor quantum-dot single-photon sources. Nat. Nanotechnol. 12, 1026–1039 (2017).
Yang, Y. et al. High-efficiency light-emitting devices based on quantum dots with tailored nanostructures. Nat. Photon. 9, 259–266 (2015).
Puttisong, Y. et al. Room-temperature electron spin amplifier based on Ga(In)NAs alloys. Adv. Mater. 25, 738–742 (2013).
Marcinkevičius, S., Siegert, J. & Zhao, Q. X. Carrier spin dynamics in modulation-doped InAs/GaAs quantum dots. J. Appl. Phys. 100, 054310 (2006).
Bi, W. G. & Tu, C. W. Bowing parameter of the band-gap energy of GaNxAs1−x. Appl. Phys. Lett. 70, 1608–1610 (1997).
Pryor, C. E. & Flatté, M. E. Landé g factors and orbital momentum quenching in semiconductor quantum dots. Phys. Rev. Lett. 96, 026804 (2006).
Aho, A., Korpijärvi, V., Tukiainen, A., Puustinen, J. & Guina, M. Incorporation model of N into GaInNAs alloys grown by radio-frequency plasma-assisted molecular beam epitaxy. J. Appl. Phys. 116, 213101 (2014).
Gladysiewicz, M., Kudrawiec, R. & Wartak, M. S. Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells. J. Appl. Phys. 115, 033515 (2014).
Acknowledgements
W.M.C. acknowledges support from the Swedish Research Council (grant nos. 2016-05091 and 2020-04530) and from the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) (grant no. JA2014-5698); I.A.B. from the Swedish Research Council (grant nos. 2015-05532 and 2019-04312); W.M.C. and I.A.B. from Linköping University through the Professor Contracts and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University (Faculty Grant SFO-Mat-LiU no. 2009-00971); M.G. from the European Research Council, ERC AdG AMETIST (grant no. 695116) and from the Academy of Finland, NanoLight project (grant no. 310985); T.H. from the Academy of Finland QuantSi project (grant no. 323989); A.M. from Japan Society for the Promotion of Science (JSPS) (grant nos. 16H06359 and 19H05507, and bilateral program); S.H. from JSPS (grant no. 19K15380). M.G. thanks M. Raappana for atomic force microscopy characterization and E. Anttola for samples preparation.
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W.M.C. conceived and coordinated the project. Y.Q.H. and P.J. conducted continuous-wave optical and magnetooptical experiments and analysed the data under the supervision of W.M.C. and I.A.B. The fabrication process of the experimental samples was developed by V.P., A.A. and T.H. under the supervision of M.G. Epitaxy and XRD characterization was performed by R.I. and A.A. S.H., S.S., J.T. and Y.Q.H. performed time-resolved optical and magnetooptical experiments and analysed data under the supervision of A.M., I.A.B. and W.M.C. Y.Q.H. and W.M.C. wrote the manuscript, with contributions from all other co-authors.
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Huang, Y., Polojärvi, V., Hiura, S. et al. Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filtering. Nat. Photonics 15, 475–482 (2021). https://doi.org/10.1038/s41566-021-00786-y
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DOI: https://doi.org/10.1038/s41566-021-00786-y
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