Abstract
Group-IV metal chalcogenides-based diluted magnetic semiconductor (DMS) thin films with high-temperature ferromagnetism (FM) are desirable for semiconductor spintronic devices. In this paper, transition-metal (TM = V, Cr, Mn, Fe, Co and Ni)-doped GeSe polycrystalline films are deposited by solid-source chemical vapor deposition (CVD). Magnetic measurements reveal that Mn-, Fe- and Co-doped GeSe films exhibit robust FM with Curie temperatures (TC) up to 277, 255 and 243 K, respectively, whereas V-, Cr- and Ni-doped GeSe films show weak FM. Magneto-transport measurements show that Mn-, Fe- and Co-doped GeSe films possess relatively high hole concentrations up to ∼1020 cm−3 at 300 K. Further analysis based on experimental and calculation results shows that the robust FM in Mn-, Fe- and Co-doped GeSe films is attributed to the carrier-enhanced Ruderman-Kittel-Kasuya-Yosida interaction. Our results give insights into the rich variety in TM-doped GeSe DMS thin films and offer a new platform for related fundamental research and device applications.
摘要
具有高温铁磁性的IV族金属硫族化物磁性半导体薄膜是半导体 自旋电子器件所需要的重要材料. 本文采用固体源化学气相沉积法制 备了一系列过渡金属元素(TM = V, Cr, Mn, Fe, Co和Ni)掺杂GeSe的 多晶半导体薄膜样品. 磁性测量表明, Mn, Fe和Co掺杂的GeSe薄膜表现 出较强的铁磁性, 居里温度(TC)分别高达277, 255和243 K, 而V, Cr和Ni 掺杂GeSe的多晶薄膜表现出较弱的铁磁性. 磁电输运测量表明, Mn, Fe 和Co掺杂GeSe的多晶薄膜具有相对较高的空穴浓度, 在300 K下高达 ∼1020 cm−3. 基于实验和计算结果的进一步分析表明, Mn, Fe和Co掺杂 GeSe的多晶薄膜中的强铁磁性归因于载流子增强的Ruderman-Kittel-Kasuya-Yosida相互作用. 我们的研究结果展示了过渡金属掺杂GeSe的 磁性半导体薄膜的丰富多样性, 并为相关基础研究和器件应用提供了 一个新平台.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (52172272). We thank the Analytical & Testing Center of Sichuan University for the SEM and XPS measurements.
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Author contributions Li D prepared the samples and performed the experiments; Zhang X, He W, and Peng Y provided the resources and supervised the project; Li D, Zhang X, and Xiang G wrote the paper; Xiang G designed and supervised the project. All authors contributed to the general discussion.
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Deren Li is a PhD student at Sichuan University under the supervision of Prof. Gang Xiang. His current research interests focus on the IV–VI diluted magnetic semiconductors as well as the related functional devices.
Gang Xiang earned his PhD degree in condensed matter physics from Pennsylvania State University-University Park in 2006. Then he worked at Pennsylvania State University-University Park (2006–2007) and also at Ohio State University-Columbus (2007–2010) as a postdoctoral researcher. He joined Sichuan University in 2010. His research interests include the design and fabrication of novel magnetic materials and semiconductors, and their spintronic and electronic applications.
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Transition metal (TM = V, Cr, Mn, Fe, Co, Ni)-doped GeSe diluted magnetic semiconductor thin films with high-temperature ferromagnetism
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Li, D., Zhang, X., He, W. et al. Transition metal (TM = V, Cr, Mn, Fe, Co, Ni)-doped GeSe diluted magnetic semiconductor thin films with high-temperature ferromagnetism. Sci. China Mater. 67, 279–288 (2024). https://doi.org/10.1007/s40843-023-2657-2
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DOI: https://doi.org/10.1007/s40843-023-2657-2