Abstract
The installation amount of solar power plants increases every year. Multi-crystalline Si solar cells comprise a large share of the market of solar power plants. Multi-crystalline and single-crystalline Si solar cells are competing against one another in the market. Many single-crystalline companies are trying to develop and produce n-type solar cells with higher cell efficiency than that of p-type. In n-type wafers with high cell efficiency, wafer quality has become increasingly important. In order to make ingots with higher MCLT, the effects of both poly types related to metal impurities and pull speeds related to vacancy concentration on minority carrier life time were studied. In the final part of ingots, poly types related to the metal impurities are a dominant factor on MCLT. In the initial part of ingots, pull speeds related to vacancy concentration are a dominant factor on MCLT.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. Hosenuzzaman, N. A. Rahim, J. Selvaraj, M. Hasanuzzaman, A. B. M. A. Malek, and A. Nahar, Renew. Sust. Energ. Rev. 41, 284 (2015).
K. Y. Kim, H. K. Moon, N. E. Lee, B. H. Hong, and S. H. Oh, Electron. Mater. Lett. 11, 93 (2015).
A. K. Pandey, V. V. Tyagi, A. Jeyraj, L. Selvaraj, N. A. Rahim, and S. K. Tyagi, Renew. Sust. Energ. Rev. 53, 859 (2016).
S. D. Stranks, P. K. Nayak, W. Zhang, T. Stergiopoulos, and H. J. Snaith, Angew. Minirev. 54, 3240 (2015).
H. Wagner, J. Hofstetter, B. Mitchell, P. P. Altermatt, and T. Buonassisi, Energ. Proced. 77, 225 (2015).
Y. K. Park, J. G. Lu, J. H. Park, and G. Rozgonyi, Electron. Mater. Lett. 11, 658 (2015).
J. Haunschild, I. E. Reis, J. Geilker, and S. Rein, Phys. Status. Solidi-R. 5, 199 (2011).
J. Kim, S. Y. Yoon, and K. Choi, Curr. Appl. Phys. 13, 2103 (2013).
K. H. Kim, B. C. Sim, I. S. Choi, and H. W. Lee, J. Cryst. Growth 299, 206 (2007).
A. Black, J. Medina, A. Pineiro, and E. Dieguez, J. Cryst. Growth 353, 12 (2012).
V. V. Voronkov, J Cryst. Growth 59, 625 (1982).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Baik, S., Pang, I., Kim, J. et al. Improvement of minority carrier life time in N-type monocrystalline Si by the Czochralski method. Electron. Mater. Lett. 12, 426–430 (2016). https://doi.org/10.1007/s13391-016-4001-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13391-016-4001-4