Abstract
Consistent research on Tunnel Field Effect Transistors (TFETs) has led to the lookout for their viability in biosensing. The dependence of the tunneling probability on the gate dielectric constant of TFETs makes them ideal for the exploration of biomolecule sensing using modulation of the gate dielectric constant. Although numerous architectures of TFETs have been theoretically analyzed for dielectric-modulated label-free biomolecule sensing, there seems to be no distinct reported work on the fabrication of a TFET based dielectric modulated biosensor. Therefore, this article brings out the different prospects in taking forward TFETs as dielectric modulated biosensors, and discusses the challenges involved.
Article PDF
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Avoid common mistakes on your manuscript.
References
Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337
Zeitzoff PM, Huff HR (2005) MOSFET scaling trends, challenges, and key associated metrology issues through the end of the roadmap. AIP Conf Proc 788(1):203–213
Frank DJ, Dennard RH, Nowak E, Solomon PM, Taur Y, Hon-Sum Philip Wong (2001) Device scaling limits of Si MOSFETs and their application dependencies. Proc IEEE 89(3):259–288
Shukla S, Goswami R (2020) Perspective – performance assessment of TFETs for low power applications: challenges and prospects [ECS J. Solid State Sci Technol, 9, 085001 (2020)]. ECS J Solid State Sci Technol 9(10):109001
Esaki L (1958) New phenomenon in narrow germanium p-n junctions. Phys Rev 109(2):603–604
Leburton JP, Kolodzey J, Briggs S (1988) Bipolar tunneling field-effect transistor: a three-terminal negative differential resistance device for high-speed applications. Appl Phys Lett 52(19):1608–1610
Boucart K, Ionescu AM (2007) Double-gate tunnel FET with high-$\kappa$ gate dielectric. IEEE Trans Electron Devices 54(7):1725–1733
Morris DH, Avci UE, Rios R, Young IA (2014) Design of low voltage tunneling-FET logic circuits considering asymmetric conduction characteristics. IEEE J Emerg Sel Top Circ Syst 4(4):380–388
Stuetzer OM (1952) Junction fieldistors. Proc IRE 40(11):1377–1381
Choi WY et al (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745
Choi WY, Lee W (2010) Hetero-gate-dielectric tunneling field-effect transistors. IEEE Trans Electron Devices 57(9):2317–2319
Jhaveri R et al (2011) Effect of pocket doping and annealing schemes on the source-pocket tunnel field-effect transistor. IEEE Trans Electron Devices 58(1):80–86
Knoll, L., et al. (2013) Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 μA/μm @ VDD=1.1V. 2013 14th international conference on ultimate integration on silicon (ULIS)ULIS), Coventry, pp. 97–100, https://doi.org/10.1109/ULIS.2013.6523500
Shirazi SG, Karimi G, Mirzakuchaki S (2016) Temperature dependence of I-V characteristics for CNT based p-i-n TFET and n-i-n MOSFET. ECS J Solid State Sci Technol 5(6):M44–M50
International Roadmap for Devices and Systems (2018) https://irds.ieee.org/. Accessed Nov 10 2020
Li, M. O., et al. (2016) Two-dimensional heterojunction interlayer tunnel FET (thin-TFET): from theory to applications. 2016 IEEE international electron devices meeting (IEDM)IEDM), San Francisco, CA, pp. 19.2.1–19.2.4, https://doi.org/10.1109/IEDM.2016.7838451
Ghosh RK, Mahapatra S (2013) Monolayer transition metal dichalcogenide channel-based tunnel transistor. IEEE J Electron Devices Soc 1(10):175–180
Seabaugh AC, Zhang Q (2010) Low-voltage tunnel transistors for beyond CMOS logic. Proc IEEE 98(12):2095–2110
Manocha, P., Kandpal K., Goswami R. (2020) Selection of low dimensional material alternatives to silicon for next generation tunnel field effect transistors. Silicon. https://doi.org/10.1007/s12633-020-00452-y
Sarkar D, Banerjee K (2012) Proposal for tunnel-field-effect-transistor as ultra-sensitive and label-free biosensors. Appl Phys Lett 100(14):143108
Narang R, Saxena M, Gupta RS, Gupta M (2012) Dielectric modulated tunnel field-effect transistor – a biomolecule sensor. IEEE Electron Device Lett 33(2):266–268
Goswami R, Bhowmick B (2019) Comparative analyses of circular gate TFET and heterojunction TFET for dielectric-modulated label-free biosensing. IEEE Sensors J 19(21):9600–9609
Narang R, Saxena M, Gupta M (2015) Comparative analysis of dielectric-modulated FET and TFET-based biosensor. IEEE Trans Nanotechnol 14(3):427–435
Kanungo S, Chattopadhyay S, Gupta PS, Rahaman H (2015) Comparative performance analysis of the dielectrically modulated full- gate and short-gate tunnel FET-based biosensors. IEEE Trans Electron Devices 62(3):994–1001
Singh D, Pandey S, Nigam K, Sharma D, Yadav DS, Kondekar P (2017) A charge-plasma-based dielectric-modulated junctionless TFET for biosensor label-free detection. IEEE Trans Electron Devices 64(1):271–278
Venkatesh P, Nigam K, Pandey S, Sharma D, Kondekar PN (2017) A dielectrically modulated electrically doped tunnel FET for application of label free biosensor. Superlattice Microst 109:470–479
Kanungo S, Chattopadhyay S, Gupta PS, Sinha K, Rahaman H (2016) Study and analysis of the effects of SiGe source and pocket-Doped Channel on sensing performance of dielectrically modulated tunnel FET-based biosensors. IEEE Trans Electron Devices 63(6):2589–2596
Ajay, et al. (2016) Analysis of GaSb-InAs gate all around (GAA) p-i-n tunnel FET (TFET) for application as a bio-sensor. 2016 IEEE international nanoelectronics conference (INEC) Chengdu, 2016, pp. 1–2, doi: https://doi.org/10.1109/INEC.2016.7589324
Im H, Huang XJ, Gu B, Choi YK (2007) A dielectric-modulated field-effect transistor for biosensing. Nat Nanotechnol 2(7):430–434
Abdi DB, Kumar MJ (2015) Dielectric modulated overlapping gate-on-drain tunnel-FET as a label-free biosensor. Superlattice Microst 86:198–202
Cho H et al (2011) Investigation of gate etch damage at metal/high-$k$ gate dielectric stack through random telegraph noise in gate edge direct tunneling current. IEEE Electron Device Lett 32(4):569–571
Narang R, Reddy KVS, Saxena M, Gupta RS, Gupta M (2012) A dielectric-modulated tunnel-FET-based biosensor for label-free detection: analytical modeling study and sensitivity analysis. IEEE Trans Electron Devices 59(10):2809–2817
Ferrari, G., Gozzini, F. and Sampietro, M. (2007) A current-sensitive front-end amplifier for nano-biosensors with a 2MHz BW. 2007 IEEE international solid-state circuits conference. Digest of Technical Papers, San Francisco, CA, 2007, pp. 164–165, doi: https://doi.org/10.1109/ISSCC.2007.373345
Jafari HM, Genov R (2013) Chopper-stabilized bidirectional current acquisition circuits for electrochemical amperometric biosensors. IEEE Trans Circ Syst I: Regular Pap 60(5):1149–1157. https://doi.org/10.1109/TCSI.2013.2248771
Li H, Liu X, Li L, Mu X, Genov R, Mason AJ (2016) CMOS electrochemical instrumentation for biosensor microsystems: a review. Sensors (Basel) 17(1):74. https://doi.org/10.3390/s17010074
Bhardwaj R, Sinha S, Sahu N, Majumder S, Narang P, Mukhiya R (2019) Modeling and simulation of temperature drift for ISFET-based pH sensor and its compensation through machine learning techniques. Int J Circ Theory Appl 47:954–970. https://doi.org/10.1002/cta.2618
Sinha S, Bhardwaj R, Sahu N, Ahuja H, Sharma R, Mukhiya R (2020) Temperature and temporal drift compensation for Al2O3-gate ISFET-based pH sensor using machine learning techniques. Microelectron J 97:104710
Acknowledgments
This work has been carried out under the project bearing No. SRG/2019/000660 dated 11 November, 2019, sponsored by Science and Engineering Research Board, Government of India.
Availability of Data and Material (Data Transparency)
Not Applicable.
Code Availability (Software Application or Custom Code)
Not Applicable.
Funding
File No. SRG/2019/000660 dated 11 November, 2019, sponsored by Science and Engineering Research Board, Government of India
Author information
Authors and Affiliations
Contributions
Mr. Manan Mehta has collected, organized, and analysed the information. Dr. Rupam Goswami has analysed the information, and presented the perspectives. Both the authors have participated in writing the manuscript.
Corresponding author
Ethics declarations
Research Involving Human Participants and/or Animals
This work does not involve research involving human participants and animals as this is an article under ‘Perspective’ category.
Informed Consent
Not Applicable.
Consent to Participate
Since this article is an article under ‘Perspective’ category, and does not involve human participants/ animals, therefore, this is not applicable.
Consent for Publication
Since this article is an article under ‘Perspective’ category, and does not involve human participants/ animals, therefore, this is not applicable.
Conflicts of Interest/Competing Interests (Include Appropriate Disclosures)
There is no conflict of interest.
Disclosure of Potential Conflicts of Interest
There is no potential conflicts of interest of any kind.
Additional information
Publisher’s Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Mehta, M., Goswami, R. Perspectives on Dielectric Modulated Biosensing in Silicon Tunnel FETs. Silicon 14, 1851–1858 (2022). https://doi.org/10.1007/s12633-021-00945-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-021-00945-4