Abstract
ZnO films were deposited on two substrates Silicon (Si) and glass using RF magnetron sputtering. Our aim is to characterize the structural and the nonlinear optical (NLO) properties of the new ZnO films. Both of XRD and EDX analysis were utilized to reveal some information about the structural improvements and composition of our new films. Also, morphology and thickness of the films have been acquired from a scanning electron microscope (SEM). The nonlinear absorption (NLA) coefficients of the new films were estimated from the experimental data. Our observations suggest that the present grains on the films surface could be as clusters of crystallites. The optical band gaps (Eg) of the new ZnO prepared films were found about 3.25 eV for film thickness of 500 nm and 3.29 eV for the other film thickness of 1200 nm. It was found that the two films thickness have a good quality with (002) prefer orientation, as well as compared with (002) single crystal ZnO using z-scan method. The NLA coefficient (β) of the film is inversely proportional with the films thickness.
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The authors are grateful to the D. G. Prof. I. Othman, and Prof. M. K. Sabra for their help and support.
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Abdallah, B., Zidan, M.D. & Allahham, A. Syntheses, Structural and Nonlinear Optical Characteristics of ZnO Films Using Z-Scan Technique. Silicon 13, 4139–4146 (2021). https://doi.org/10.1007/s12633-020-00702-z
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DOI: https://doi.org/10.1007/s12633-020-00702-z