Abstract
Indium oxide (In2O3) films were prepared on Al2O3 (0001) substrates at 700 °C by metal-organic chemical vapor deposition (MOCVD). Then the samples were annealed at 800 °C, 900 °C and 1 000 °C, respectively. The X-ray diffraction (XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment. Triangle or quadrangle grains can be observed, and the corner angle of the grains becomes smooth after annealing. The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm2·V-1·s-1. The average transmittance for the films in the visible range is over 90%. The optical band gaps of the samples are about 3.73 eV, 3.71 eV, 3.70 eV and 3.69 eV corresponding to the In2O3 films deposited at 700 °C and annealed at 800 °C, 900 °C and 1 000 °C, respectively.
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This work has been supported by the National Natural Science Foundation of China (Nos.61274113, 11204212 and 61404091), the Program for New Century Excellent Talents in University (No.NCET-11-1064), the Tianjin Natural Science Foundation (Nos.13JCYBJC15700, 13JCZDJC26100, 14JCZDJC31500 and 14JCQNJC00800), and the Tianjin Science and Technology Developmental Funds of Universities and Colleges (Nos.20100703, 20130701 and 20130702).
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Zhao, Hd., Mi, W., Zhang, Kl. et al. Influence of annealing on the structural, optical and electrical properties of indium oxide films deposited on c-sapphire substrate. Optoelectron. Lett. 12, 39–42 (2016). https://doi.org/10.1007/s11801-016-5235-y
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DOI: https://doi.org/10.1007/s11801-016-5235-y