Abstract
Perovskite-oxide (1 − x)KNbO3-xBaCo1/2Nb1/2O3−δ (KN-BCN; x = 0.00–0.20) ferroelectric semiconductor ceramics with oxygen defects are successfully prepared via a conventional solid-state sintering method. X-ray diffraction data indicate that the crystal symmetry evolves from orthogonal to tetragonal at increasing x values. Raman spectroscopic analysis confirms the long-range polarization of all compositions. X-ray photoelectron spectroscopy shows that the detailed chemical formula of 0.90KN-0.10BCN ceramics is 0.90KNbO3-0.10BaCo1/2Nb1/2O2.90. Room-temperature ferroelectricity weakens when the x value increases. The optical band gap narrows from 3.25 eV for x = 0.00 to 1.57 eV for x = 0.20, and the minimum value of ∼ 1.28 eV occurs in the 0.90KN-0.10BCN ceramic. Impedance analysis illustrates that the conduction mechanism of grains is mainly internal electron conduction, and that of the grain boundary is intrinsic conduction. The conducting mechanism of the ceramic system follows ohmic behavior by log I–log U curves. The maximum short-circuit photocurrent density and open-circuit photovoltage are 6.68 nA cm−2 and 0.80 V, and stable output is maintained. The KN-BCN ceramic system can be used in photovoltaic materials.
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S.Y. Yang, J. Seidel, S.J. Byrnes, P. Shafer, C.-H. Yang, M.D. Rossell, P. Yu, Y.-H. Chu, J.F. Scott, and J.W. Ager, Nat. Nanotechnol. 5, 143 (2010).
M. Alexe and D. Hesse, Nat. Commun. 2, 256 (2011).
W.S. Choi, M.F. Chisholm, D.J. Singh, T. Choi, G.E. Jellison Jr, and H.N. Lee, Nat. Commun. 3, 689 (2012).
J. Kreisel, M. Alexe, and P.A. Thomas, Nat. Mater. 11, 260 (2012).
B. Song, X. Wang, C. Xin, L. Zhang, B. Song, Y. Zhang, Y. Wang, J. Wang, Z. Liu, and Y. Sui, J. Alloys Compd. 703, 67 (2017).
S.M. Young and A.M. Rappe, Phys. Rev. Lett. 109, 116601 (2012).
J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S.B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D.G. Schlom, and U.V. Waghmare, Cheminform 299, 1719 (2003).
S. Yang, G.B. Ma, L. Xu, C.Y. Deng, and X. Wang, RSC Adv. 9, 29238 (2019).
Q. Hang, W. Zhou, X. Zhu, J. Zhu, Z.G. Liu, and T. Al-Kassab, J. Adv. Ceram. 2, 252 (2013).
J. Wu, Springer 7, 379 (2018).
C.H. Nam, H.-Y. Park, I.-T. Seo, J.-H. Choi, S. Nahm, and H.-G. Lee, J. Alloys Compd. 509, 3686 (2011).
B. Sahoo and P.K. Panda, J. Adv. Ceram. 2, 37 (2013).
M. Okayasu and K. Watanabe, J. Adv. Ceram. 5, 35 (2016).
G. Ilya, W.D. Vincent, T. Maria, G. Gaoyang, D.M. Stein, W. Liyan, C. Guannan, E.M. Gallo, A.R. Akbashev, and P.K. Davies, Nature 503, 509 (2013).
C.G. Duan, W.N. Mei, J.J. Liu, J.R. Hardy, M.J. Bai, and S. Ducharme, J. Phys. Condens. Matter 13, 8189 (2001).
X. Lv, Z. Li, J. Wu, D. Xiao, and J. Zhu, ACS Appl. Mater. Interfaces 44, 30304 (2016).
C. Pascualgonzalez, G. Schileo, and A. Feteira, Phys. Rev. Lett. 109, 495902 (2016).
F. Wang, I. Grinberg, and A.M. Rappe, Phys. Rev. B 89, 5105 (2014).
Y. Jiang, Z. Zou, and J. Ye, J. Mater. Sci. 41, 1131 (2006).
M.A. Mohiddon and K.L. Yadav, J. Phys. D Appl. Phys. 40, 7540 (2007).
T. Zhang, K. Zhao, J. Yu, J. Jin, Y. Qi, H. Li, X. Hou, and G. Liu, Nanoscale 5, 8375 (2013).
A.M. Quittet, M.I. Bell, M. Krauzman, and P.M. Raccah, Phys. Rev. B 14, 5068 (1976).
A. Bartasyte, J. Kreisel, W. Peng, and M. Guillouxviry, Appl. Phys. Lett. 96, 633 (2010).
J.A. Baier-Saip, E. Ramos-Moor, and A.L. Cabrera, Solid State Commun. 135, 367 (2005).
V.V. Atuchin, I.E. Kalabin, V.G. Kesler, and N.V. Pervukhina, J. Electron. Spectrosc. 142, 129 (2005).
R. Sawyer, H.W. Nesbitt, and R.A. Secco, J. Non-Cryst. Solids. 358, 290 (2012).
V.V. Atuchin, V.G. Kesler, N.Y. Maklakova, L.D. Pokrovsky, and V.N. Semenenko, Surf. Interface Anal. 34, 320 (2002).
B.J. Tan, K.J. Klabunde, and P.M.A. Sherwood, J. Am. Chem. Soc. 113, 855 (1991).
V.V. Atuchin, V.G. Kesler, V.K. Sapozhnikov, and V.N. Yakovenchuk, Mater. Charact. 59, 1329 (2008).
V.V. Atuchin, J.C. Grivel, A.S. Korotkov, and Z. Zhang, J. Solid State Chem. 181, 1285 (2008).
P. Pertosa and F.M. Michel-Calendini, Phys. Rev. B. 17, 2011 (1978).
T. Boningari, P.R. Ettireddy, A. Somogyvari, Y. Liu, A. Vorontsov, C.A. McDonald, and P.G. Smirniotis, J. Catal. 325, 145 (2015).
G. Shirane, H. Danner, A. Pavlovic, and R. Pepinsky, Phys. Rev. 93, 672 (1954).
Q. Wei, Z. Wang, X. Li, X. Long, and Z.G. Ye, Chem. Mater. 21, 506 (2009).
C. Long, C. Qi, W. Yun, W. He, Y. Li, and H. Fan, J. Mater. Chem. C 3, 8852 (2015).
W. Zhou, H. Deng, P. Yang, and J. Chu, Appl. Phys. Lett. 105, 134 (2014).
N. Masó and A.R. West, Chem. Mater. 27, 1552 (2015).
J. Wu, J. Wang, D. Xiao, and J. Zhu, J. Appl. Phys. 110, 064104 (2011).
T. He, K.D. Kreuer, Y.M. Baikov, and J. Maier, Solid State Ionics 95, 301 (1997).
A. Kazakopoulos, C. Sarafidis, K. Chrissafis, and O. Kalogirou, Solid State Ionics 179, 1980 (2008).
L. Ming, M.J. Pietrowski, R.A. De Souza, Z. Huairuo, I.M. Reaney, S.N. Cook, J.A. Kilner, and D.C. Sinclair, Nat. Mater. 13, 31 (2014).
Y. Sun, H. Liu, H. Hao, L. Zhang, and S. Zhang, Ceram. Int. 41, 931 (2015).
M. Coskun, O. Polat, F.M. Coskun, Z. Durmus, M. Caglar, and A. Turut, Mater. Sci. Semicond. Proc. 109, 104923 (2020).
M. Prades, H. Beltrán, E. Cordoncillo, P.J. Alonso, N. Masó, and A.R. West, Phys. Status Solidi 209, 2267 (2012).
D.S. Shang, Q. Wang, L.D. Chen, R. Dong, X.M. Li, and W.Q. Zhang, Phys. Rev. B 73, 245427 (2006).
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This work was supported by the National Natural Science Foundation of China (Grant No. 11464006) and Guangxi Key Laboratory of Information Materials (Grant No. 191026–Z).
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Han, F., Zhang, Y., Yuan, C. et al. Impedance Spectroscopy and Photovoltaic Effect of Oxygen Defect Engineering on KNbO3 Ferroelectric Semiconductors. J. Electron. Mater. 49, 6165–6174 (2020). https://doi.org/10.1007/s11664-020-08334-0
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DOI: https://doi.org/10.1007/s11664-020-08334-0