Abstract
The physical vapour deposition method was employed to study and improve the optoelectronic properties of CdO as a transparent conducting oxide (TCO), using the doping technique. Different small amounts of titanium ions were incorporated into CdO thin films deposited on glass substrates and were used to study the conduction parameters CPs (conductivity/resistivity, carrier mobility, and carrier concentration) together with the optical transparency. Different diagnostic methods, x-ray diffraction, optical absorption spectroscopy, scanning electron microscopy and electrical measurements were used to study and characterize the deposited thin films. The results of this work, revealed that the ultimate TCO CPs were obtained with Ti doping level of 0.3–0.6 wt.%; the mobility∼ 40 cm2/V.s, carrier concentration ∼ 7×1020 cm−3 and conductivity ∼ 2.88 × 103 S/cm. The results, also revealed that Ti doping strongly enhanced the [111] preferred orientation growth of CdO films especially with 0.3 wt.%.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
B.G. Lewis and D.C. Paine, Mater. Res. Soc. Bull. 25, 22 (2000).
M. Yan, M. Lane, C.R. Kannewarf, and R.P.H. Changa, Appl. Phys. Lett. 78, 2342 (2001).
Z. Zhao, D.L. Morel, and C.S. Ferekides, Thin Solid Films 413, 203 (2002).
R.K. Gupta, K. Ghosh, R. Patel, S.R. Mishra, and P.K. Kahol, Curr. Appl. Phys. 9, 673 (2009).
A.A. Dakhel, Thin Solid Films 518, 1712 (2010).
R.K. Gupta, F. Yakuphanoglu, and F.M. Amanullah, Phys. E 43, 1666 (2011).
A.A. Dakhel, J. Electron. Mater. 41, 2405 (2012).
Powder Diffraction File, Joint Committee for Powder Diffraction Studies (JCPDS) file No. 05-0640.
R.D. Shannon, Act Crystallogr. A 32, 751 (1976).
M. Pozzo and D. Alfe, Int. J. Hydrog. Energy 34, 1922 (2009).
Haixia Chen, Jijun Ding, Feng Shi, Yingfeng Li, and Wenge Guo, J. Alloys Compd. 534, 59 (2012).
A. Davoodia, M. Tajallya, O. Mirzaeea, and A. Eshaghi, Optik 127, 4645 (2016).
R.K. Gupta, K. Ghosh, S.R. Mishra, and P.K. Kahol, Mater. Lett. 62, 1033 (2008).
K. Sakthiraj and K. Balachandra Kumar, Int. J. ChemTech Res. 6, 2216 (2014).
B. Saha, R. Thapa, and K.K. Chattopadhyay, Solid State Commun. 145, 33 (2008).
C.P. Liu, Y. Foo, M. Kamruzzaman, C.Y. Ho, J.A. Zapien, W. Zhu, Y.J. Li, W. Walukiewicz, and K.M. Yu, Phys. Rev. Appl. 6, 064018 (2016).
R.K. Gupta, K. Ghosh, R. Patel, and P.K. Kahol, Appl. Surf. Sci. 255, 2414 (2008).
R.K. Gupta, K. Ghosh, R. Patel, and P.K. Kahol, Appl. Surf. Sci. 255, 6252 (2008).
C.S. Barrett and T.B. Massalski, Structure of Metals (Oxford: Pergamon, 1980), p. 204.
A.A. Dakhel and H. Hamad, Int. J. Thin Films Sci. Technol. 1, 25 (2012).
A.A. Dakhel, Mater. Chem. Phys. 130, 398 (2011).
C. Kittel, Introduction to Solid State Physics (New York: Wiley, 1996), p. 425.
Y. Sharma and P. Srivastava, Indian J. Pure Appl. Phys. 49, 619 (2011).
L.B. McCusker, R.B. Von Dreele, D.E. Cox, D. Louer, and P. Scardi, J. Appl. Cryst. 32, 36 (1999).
S. Heo, C. Oh, J. Son, and H. Myung Jang, Sci. Rep. 7, 4681 (2017). https://doi.org/10.1038/s41598-017-04884-2.
E. Enriquez, A. Chen, Z. Harrell, P. Dowden, N. Koskelo, J. Roback, M. Janoschek, C. Chen, and Q. Jia, Sci. Rep. 7, 46184 (2016). https://doi.org/10.1038/srep46184.
A. Marthinsen, C. Faber, U. Aschauer, N. Spaldin, and S. Selbach, MRS Commun. 6, 182 (2016).
A. Khorsand Zak, W.H. Abd Majid, M.E. Abrishami, and R. Yousefi, Solid State Sci. 13, 251 (2011).
A.A. Dakhel, Bull. Mater. Sci. 37, 1 (2014).
J. Tauc and F. Abelesn, eds., Optical Properties of Solids (New York: North Holland, 1969).
J.I. Pankove, Optical Processes in Semiconductors (NY: Dover, 1975), p. 36.
I.S. Yahia, G.F. Salem, M.S. Abd El-sadek, and F. Yakuphanoglu, Superlattices Microstruct. 64, 178 (2013).
R. Maity and K.K. Chattopadhyay, Solar Energy Mater. Solar Cells 90, 597 (2006).
A.M. El Sayed and A. Ibrahim, Mater. Sci. Semicond. Process. 26, 320 (2014).
J.G. Lu and S. Fujita, Appl. Phys. Lett. 89, 262107 (2006).
A.A. Dakhel, Opt. Mater. 31, 691 (2009).
K.G. Saw, N.M. Aznan, F.K. Yam, S.S. Ng, and S.Y. Pung, PLoS ONE 10, e0141180 (2015). https://doi.org/10.1371/journal.pone.0141180.
J.J. Lu, Y.M. Lu, S.I. Tasi, T.L. Hsiung, H.P. Wang, and L.Y. Jang, Opt. Mater. 29, 1548 (2007).
Y.Z. Zhang, J.G. Lu, Z.Z. Ye, H.P. He, L.P. Zhu, B.H. Zhao, and L. Wang, Appl. Surf. Sci. 254, 1993 (2008).
J.M. Langer, C. Delerue, M. Lannoo, and H. Heinrich, Phys. Rev. B 38, 7723 (1988).
Mario Burbano, D.O. Scanlon, and G.W. Watson, J. Am. Chem. Soc. 133, 15065 (2011).
M. Chen, Z.L. Pei, X. Wang, Y.H. Yu, X.H. Liu, C. Sun, and L.S. Wen, J. Phys. D Appl. Phys. 33, 2538 (2000).
A.A. Dakhel, Mater. Res. 18, 222 (2015).
A.A. Dakhel, Solid State Sci. 25, 33 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Dakhel, A.A., Hamad, H. Electronic and Bandgap Tuning of Hydrogenated Ti-doped CdO Semiconductor. J. Electron. Mater. 48, 4293–4299 (2019). https://doi.org/10.1007/s11664-019-07206-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-019-07206-6