Abstract
Achieving simultaneously high carrier density and lifetime is important for II–VI semiconductor-based applications such as photovoltaics and infrared detectors; however, it is a challenging task. In this work, high purity CdTe single crystals doped with indium (In) were grown by vertical Bridgman melt growth under carefully controlled stoichiometry. Two-photon excitation time-resolved photoluminescence was employed to measure bulk recombination lifetime by eliminating surface recombination effects. By adjusting stoichiometry with post growth annealing, high-net free carrier density approaching 1018 cm−3 was achieved simultaneously with lifetime approaching the radiative limit by suppressing non-radiative recombination centers.
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M.O. Reese, A. Kanevce, T.M. Barnes, S.A. Jensen, and W.K. Metzger, J. Appl. Phys. 121, 214506 (2017).
S.-H. Wei and S.B. Zhang, Phys. Rev. B. 66, 155211 (2002).
W. Stadler, D.M. Hofmann, H.C. Alt, T. Muschik, B.K. Meyer, E. Weigel, G. Müller-Vogt, M. Salk, E. Rupp, and K.W. Benz, Phys. Rev. B. 51, 10619 (1995).
S. Seto, K. Suzuki, V.N. Abastillas Jr., and K. Inabe, J. Cryst. Growth 214, 974 (2000).
N. Krsmanovic, K.G. Lynn, M.H. Weber, R. Tjossem, Th. Gessmann, Cs. Szeles, E.E. Eissler, J.P. Flint, and H.L. Glass, Phys. Rev. B. 62, 16279 (2000).
B. Segall, M.R. Lorenz, and R.E. Halsted, Phys. Rev. 129, 2471 (1963).
M. Becerril, O. Zelaya-Angel, R. Ramĺrez-Bon, F.J. Espinoza-Beltrán, and K. González-Hernández, Appl. Phys. Lett. 70, 452 (1997).
O.S. Ogedengbe, C.H. Swartz, P.A.R.D. Jayathilaka, J.E. Petersen, S. Sohal, E.G. LeBlanc, M. Edirisooriya, K.N. Zaunbrecher, A. Wang, T.M. Barnes, and T.H. Myers, J. Electron. Mater. 46, 5424 (2017).
J. Ma, D. Kuciauskas, D. Albin, R. Bhattacharya, M. Reese, T. Barnes, J.V. Li, T. Gessert, and S.-H. Wei, Phys. Rev. Lett. 111, 067402 (2013).
J.-H. Yang, W.K. Metzger, and S.-H. Wei, Appl. Phys. Lett. 111, 042106 (2017).
S. Farrell, T. Barnes, W.K. Metzger, J.H. Park, R. Kodama, and S. Sivananthan, J. Electron. Mater. 44, 3202 (2015).
M.O. Reese, C.L. Perkins, J.M. Burst, S. Farrell, T.M. Barnes, S.W. Johnston, D. Kuciauskas, T.A. Gessert, and W.K. Metzger, J. Appl. Phys. 118, 155305 (2015).
M.O. Reese, J.M. Burst, C.L. Perkins, A. Kanevce, S.W. Johnston, D. Kuciauskas, T.M. Barnes, and W.K. Metzger, IEEE J. Photovolt. 5, 382 (2015).
D. Kuciauskas, A. Kanevce, J.M. Burst, J.N. Duenow, R. Dhere, D.S. Albin, D.H. Levi, and R.K. Ahrenkiel, IEEE J. Photovolt. 3, 1319 (2013).
D.M. Hofmann, P. Omling, H.G. Grimmeiss, B.K. Meyer, K.W. Benz, and D. Sinerius, Phys. Rev. B. 45, 6247 (1992).
J.-H. Yang, L. Shi, L.-W. Wang, and S.-H. Wei, Sci. Rep. 6, 21712 (2016).
R. Soundararajan, K.G. Lynn, S. Awadallah, C. Szeles, and S.-H. Wei, J. Electron. Mater. 35, 1333 (2006).
M. Fiederle, C. Eiche, M. Salk, R. Schwarz, K.W. Benz, W. Stadler, D.M. Hofmann, and B.K. Meyer, J. Appl. Phys. 84, 6689 (1998).
P. Rudolph, A. Engel, I. Schentke, and A. Grochocki, J. Cryst. Growth 147, 297 (1995).
J.H. Greenberg, V.N. Guskov, V.B. Lazarev, and O.V. Shebershneva, J. Solid State Chem. 102, 382 (1993).
G. Yang, A.E. Bolotnikov, Y. Cui, G.S. Camarda, A. Hossain, and R.B. James, J. Cryst. Growth 311, 99 (2008).
J.M. Burst, J.N. Duenow, D.S. Albin, E. Colegrove, M.O. Reese, J.A. Aguiar, C.S. Jiang, M.K. Patel, M.M. Al-Jassim, D. Kuciauskas, S. Swain, T. Ablekim, K.G. Lynn, and W.K. Metzger, Nat. Energy 1, 16015 (2016).
R. Cohen, V. Lyahovitskaya, E. Poles, A. Liu, and Y. Rosenwaks, Appl. Phys. Lett. 73, 1400 (1998).
C.H. Swartz, M. Edirisooriya, E.G. LeBlanc, O.C. Noriega, P.A.R.D. Jayathilaka, O.S. Ogedengbe, B.L. Hancock, M. Holtz, T.H. Myers, and K.N. Zaunbrecher, Appl. Phys. Lett. 105, 222107 (2014).
G. Benz and R. Conradt, Phys. Rev. B. 16, 843 (1977).
R.K. Ahrenkiel and S.W. Johnston, Sol. Energy Mater. Sol. Cells 93, 645 (2009).
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Swain, S.K., Duenow, J.N., Johnston, S.W. et al. Approach to Defect-Free Lifetime and High Electron Density in CdTe. J. Electron. Mater. 48, 4235–4239 (2019). https://doi.org/10.1007/s11664-019-07190-x
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DOI: https://doi.org/10.1007/s11664-019-07190-x