Abstract
In order to adjust the characteristic of pentacene thin film transistor, we modified the dielectric properties of the gate insulator, poly(4-vinylphenol), or PVP. PVP is an organic polymer with a low dielectric constant, limiting the performance of organic thin film transistors (OTFTs). To increase the dielectric constant of PVP, a controlled amount of ZnO nanoparticles was homogeneously dispersed in a dielectric layer. The effect of the concentration of ZnO on the relative permittivity of PVP was measured using impedance spectroscopy and it has been demonstrated that the permittivity increases from 3.6 to 5.5 with no percolation phenomenon even at a concentration of 50 vol.%. The performance of OTFTs in terms of charge carrier mobility, threshold voltage and linkage current was evaluated. The results indicate a dramatic increase in both the field effect mobility and the linkage current by a factor of 10. It has been demonstrated that the threshold voltage can be adjusted. It shifts from 8 to 0 when the volume concentration of ZnO varied from 0 vol.% to 50 vol.%.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T.A. Skoteim and J. Reynolds, Handbook of Conducting Polymers, 2 Volume Set, ISBN: 9781574446654.
A.N. Aleshin, F.S. Fedichkin, and P.E. Gusakov, Phys. Solid State 53, 2251 (2011).
S. Hans, W. Huang, W. Shi, and J. Yu, Sens. Actuators B. Chem. 203, 9 (2014).
J. Park, J.W. Lee, D.W. Kim, B.J. Park, H.J. Choi, and J.S. Choi, Thin Solid Films 518, 588 (2009).
N. Stutzmann, R.H. Friend, and H. Sirringhaus, Science 299, 1881 (2003).
H. Kim, D. Kim, and J. Lee, Organic. Electron. 12, 1043 (2011).
Y. Jang, D.H. Kim, Y.D. Park, J.H. Cho, M. Hwang, and K. Cho, Appl. Phys. Lett. 87, 152105 (2005).
X. Peng, G. Horowitz, D. Fichou, and F. Garnier, Appl. Phys. Lett. 57, 2013 (1990).
S. Allard, M. Forster, B. Souhare, H. Thiem, and U. Scherf, Angew. Chem. Int. Ed. 47, 4070 (2008).
K.N. Narayanan Unni, S. Dabos-Seignon, A.K. Pandey, and J.M. Nunzi, Solid-State. Electron. 52, 179 (2008).
C.W. Teng, J.F. Muth, Ü. ÖzgÜr, M.J. Bergmann, H.O. Everitt, A.K. Sharma, C. Jin, and J. Narayan, Appl. Phys. Lett. 76, 979 (2000).
N. Ashkenov, B.N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E.M. Kaidashev, A. Kasic, M. Schubert, M. Grundmann, G. Wagner, H. Neumann, V. Darakchieva, H. Arwin, and B. Monemar, J. Appl. Phys. 93, 126 (2003).
G.A. Niklasson, C.G. Granqvist, and O. Hunderi, Appl. Opt. 20, 26 (1981).
J.C.M. Garnett, Philos. Trans. R. Soc. London Ser. A 203, 385 (1904).
D. Varshney, K. Verma, and S. Dwivedi, Optik. 126, 4232 (2015).
C. Baek and S.M. Seo, Appl. Phys. Lett. 94, 153305 (2009).
S.M. Sze and K.K. Ng, Physics of Semiconductor Devices, 3rd Edition, ISBN: 978-0-471-14323-9.
T. Richards, M. Bird, and H. Sirringhaus, J. Chem. Phys. 128, 234905 (2008).
H. Yanagiswa, T. Tamaki, M. Nakamura, and K. Kudo, Thin Solid Films 464, 398 (2004).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Boughias, O., Belkaid, M.S., Zirmi, R. et al. Field Effect Transistors Based on Composite Films of Poly(4-vinylphenol) with ZnO Nanoparticles. J. Electron. Mater. 47, 2447–2453 (2018). https://doi.org/10.1007/s11664-018-6087-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6087-y