Abstract
Microwave-assisted successive ionic layer adsorption and reaction was employed to synthesize Sn-ZnO (tin-doped zinc oxide), and its sensitivity to ultraviolet radiation is compared with zinc oxide (ZnO). The sensing films were made by the dip-coated method on an indium titanium oxide glass substrate, and the sensing performance was monitored using the 300–700 nm wavelength of UV–Vis light. Excellent sensitivity and recovery were observed for the Sn-doped ZnO sensor device, especially at 380 nm wavelength of ultraviolet (UV) light (response and recovery time 2.26 s and 8.63 s, respectively, at 5 V bias voltage). The variation in photocurrent with respect to dark and light illumination atmosphere was well illustrated based on the Schottky and inter-particle network effects. Doping of Sn on ZnO nanoparticles varied the surface roughness and crystallite size as observed from scanning electron microscopic and x-ray diffraction studies. Here, we demonstrate a simple and economical fabrication technique for designing a high-performance UV light sensor. The developed device works at room temperature with high durability and stability.
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This publication was made possible by the support of an NPRP grant from the Qatar National Research Fund (NPRP 7 - 673 - 2 - 251). The statements made here are solely the responsibility of the authors.
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Thomas, D., Vijayalakshmi, K.A., Sadasivuni, K.K. et al. A Fast Responsive Ultraviolet Sensor from mSILAR-Processed Sn-ZnO. J. Electron. Mater. 46, 6480–6487 (2017). https://doi.org/10.1007/s11664-017-5680-9
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DOI: https://doi.org/10.1007/s11664-017-5680-9