Abstract
The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi0.5Na0.5TiO3 materials were synthesized by using the sol–gel method. The optical band gap was reduced from 3.12 eV to 2.12 eV for undoped and 9 mol.% Cr-doped Bi0.5Na0.5TiO3 with the substitution of Cr at the Ti-site. Cr-doped Bi0.5Na0.5TiO3 materials exhibited weak ferromagnetism at room temperature. Saturation magnetization was approximately 0.08 μ B/Cr at 5 K. Our work will facilitate the further understanding of the role of transition metal ferromagnetism in lead-free ferroelectric materials at room temperature.
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Thanh, L.T.H., Doan, N.B., Dung, N.Q. et al. Origin of Room Temperature Ferromagnetism in Cr-Doped Lead-Free Ferroelectric Bi0.5Na0.5TiO3 Materials. J. Electron. Mater. 46, 3367–3372 (2017). https://doi.org/10.1007/s11664-016-5248-0
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DOI: https://doi.org/10.1007/s11664-016-5248-0