Abstract
Two dimensional materials such as transition metal dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in electronics and optoelectronics. In this work, we have explored device level performance of trilayer TMDC heterostructure (MoS2/MX2/MoS2; M = Mo or, W and X = S or, Se) metal oxide semiconductor field effect transistors (MOSFETs) in the quantum ballistic regime. Our simulation shows that device ‘on’ current can be improved by inserting a WS2 monolayer between two MoS2 monolayers. Application of biaxial tensile strain reveals a reduction in drain current which can be attributed to the lowering of carrier effective mass with increased tensile strain. In addition, it is found that gate underlap geometry improves electrostatic device performance by improving sub-threshold swing. However, increase in channel resistance reduces drain current. Besides exploring the prospect of these materials in device performance, novel trilayer TMDC heterostructure double gate field effect transistors (FETs) are proposed for sensing Nano biomolecules as well as for pH sensing. Bottom gate operation ensures these FETs operating beyond Nernst limit of 59 mV/pH. Simulation results found in this work reveal that scaling of bottom gate oxide results in better sensitivity while top oxide scaling exhibits an opposite trend. It is also found that, for identical operating conditions, proposed TMDC FET pH sensors show super-Nernst sensitivity indicating these materials as potential candidates in implementing such sensor. Besides pH sensing, all these materials show high sensitivity in the sub-threshold region as a channel material in nanobiosensor while MoS2/WS2/MoS2 FET shows the least sensitivity among them.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S.Z. Butler, S.M. Hollen, L. Cao, Y. Cui, J.A. Gupta, H.R. Gutirrez, T.F. Heinz, S.S. Hong, J. Huang, A.F. Ismach, E. Johnston-Halperin, M. Kuno, V.V. Plashnitsa, R.D. Robinson, R.S. Ruoff, S. Salahuddin, J. Shan, L. Shi, M.G. Spencer, M. Terrones, W. Windl, and J.E. Goldberger, ACS Nano 7, 2898 (2013).
C.N.R. Rao, K. Gopalakrishnan, U. Maitra, and A.C.S. Appl, Mater. Interfaces 7, 7809 (2015).
H. Peelaers and C.G. Van de Walle, Phys. Rev. B 86, 241401 (2012).
E.S. Kadantsev and P. Hawrylak, Solid State Commun. 152, 909 (2012).
H. Terrones, F. López-Urías, and M. Terrones, Sci. Rep. 3, 1549 (2013).
N. Lu, H. Guo, L. Li, J. Dai, L. Wang, W.-N. Mei, X. Wu, and X.C. Zeng, Nanoscale 6, 2879 (2014).
J. He, K. Hummer, and C. Franchini, Phys. Rev. B 89, 075409 (2014).
B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).
Y. Yoon, K. Ganapathi, and S. Salahuddin, Nano Lett. 11, 3768 (2011).
S. Das, H.Y. Chen, A.V. Penumatcha, and J. Appenzeller, Nano Lett. 13, 100 (2013).
W. Liu, J. Kang, D. Sarkar, Y. Khatami, D. Jena, and K. Banerjee, Nano Lett. 13, 1983 (2013).
H. Fang, S. Chuang, T.C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12, 3788 (2012).
W. Cao, J. Kang, W. Liu, and K. Banerjee, IEEE Trans. Electron Devices 61, 4282 (2014).
W. Cao, J. Kang, D. Sarkar, W. Liu, and K. Banerjee, IEEE Trans. Electron Devices 62, 3459 (2015).
S.V. Suryavanshi and E. Pop, in 2015 73rd Annual Device Research Conference (DRC) (2015), vol. 569, p. 9.
G.S. Duesberg, Nat. Mater. 13, 1075 (2014).
C. Huang, S. Wu, A.M. Sanchez, J.J.P. Peters, R. Beanland, J.S. Ross, P. Rivera, W. Yao, D.H. Cobden, and X. Xu, Nat. Mater. 13, 1 (2014).
M.O. Li, D. Esseni, J.J. Nahas, D. Jena, and H.G. Xing, IEEE J. Electron Devices Soc. 3, 200 (2015).
T. Niu and A. Li, Prog. Surf. Sci. 90, 21 (2015).
X. Zhang, F. Meng, J.R. Christianson, C. Arroyo-Torres, M.A. Lukowski, D. Liang, J.R. Schmidt, and S. Jin, Nano Lett. 14, 3047 (2014).
S. Wang, X. Wang, and J.H. Warner, ACS Nano 9, 5246 (2015).
N. Lu, H. Guo, L. Wang, X. Wu, and X.C. Zeng, Nanoscale 6, 4566 (2014).
J. Go, P.R. Nair, B. Reddy, B. Dorvel, R. Bashir, and M.A. Alam, Tech. Dig. Int. Electron Devices Meet. IEDM, 8.7.1 (2010).
M.-J. Spijkman, J.J. Brondijk, T.C.T. Geuns, E.C.P. Smits, T. Cramer, F. Zerbetto, P. Stoliar, F. Biscarini, P.W.M. Blom, and D.M. de Leeuw, Adv. Funct. Mater. 20, 898 (2010).
H. Nam, B.R. Oh, P. Chen, J.S. Yoon, S. Wi, M. Chen, K. Kurabayashi, and X. Liang, Appl. Phys. Lett. 107, 1 (2015).
J. Lee, P. Dak, Y. Lee, H. Park, W. Choi, M. Alam, and S. Kim, Sci. Rep. 4, 7352 (2014).
D. Sarkar, W. Liu, X. Xie, A.C. Anselmo, S. Mitragotri, and K. Banerjee, ACS Nano 8, 3992 (2014).
H. Nam, B.-R. Oh, M. Chen, S. Wi, D. Li, K. Kurabayashi, and X. Liang, J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 33, 06FG01 (2015).
Y. Liu, X. Dong, and P. Chen, Chem. Soc. Rev. 41, 2283 (2012).
W. Wu, D. De, S.C. Chang, Y. Wang, H. Peng, J. Bao, and S.S. Pei, Appl. Phys. Lett. 102, 1 (2013).
P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni, D. Ceresoli, G.L. Chiarotti, M. Cococcioni, I. Dabo, A. Dal Corso, S. de Gironcoli, S. Fabris, G. Fratesi, R. Gebauer, U. Gerstmann, C. Gougoussis, A. Kokalj, M. Lazzeri, L. Martin-Samos, N. Marzari, F. Mauri, R. Mazzarello, S. Paolini, A. Pasquarello, L. Paulatto, C. Sbraccia, S. Scandolo, G. Sclauzero, A.P. Seitsonen, A. Smogunov, P. Umari, and R.M. Wentzcovitch, J. Phys.: Condens. Matter 21, 395502 (2009).
Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M.S. Lundstrom, IEEE Trans. Electron Devices 50, 1914 673 (2003).
O. Kurniawan, P. Bai, and E. Li, J. Phys. D Appl. Phys. 42, 105109 (2009).
C. Hartwigsen, S. Goedecker, and J. Hutter, Phys. Rev. B 58, 3641 (1998).
H. Monkhors and J. Pack, Phys. Rev. B 13, 5188 (1976).
N. Ma and D. Jena, Appl. Phys. Lett. 102, (2013).
S. Birner, C. Uhl, M. Bayer, and P. Vogl, J. Phys: Conf. Ser. 107, 012002 (2008).
D. Jiménez, Appl. Phys. Lett. 101, 243501 (2012).
Y. Liu, Ph.D. Thesis, Purdue University (2012).
J. Go, P. R. Nair, and M. A. Alam, J. Appl. Phys. 112, 034516 (2012).
B. Khamaisi, O. Vaknin, O. Shaya, and N. Ashkenasy, ACS Nano 4, 4601 (2010).
X.P.A. Gao, G. Zheng, and C.M. Lieber, Nano Lett. 10, 547 (2010).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Datta, K., Shadman, A., Rahman, E. et al. Trilayer TMDC Heterostructures for MOSFETs and Nanobiosensors. J. Electron. Mater. 46, 1248–1260 (2017). https://doi.org/10.1007/s11664-016-5078-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-5078-0