Abstract
We study the role of substitutions at In and Te site in the thermoelectric behavior of In2Te5. Single crystals with compositions In2(Te1−x Se x )5 (x = 0, 0.05, 0.10) and Fe0.05In1.95(Te0.90Se0.10)5 were prepared using a modified Bridgman–Stockbarger technique. Electrical and thermal transport properties of these single crystals were measured in the temperature range of 6 K to 395 K. A substantial decrease in the thermal conductivity was observed in Fe-substituted samples, attributed to enhanced phonon scattering at point defects. Marked enhancement in the Seebeck coefficient S along with concomitant suppression of the electrical resistivity ρ was observed in Se-substituted single crystals. An overall enhancement of the thermoelectric figure of merit (zT) by a factor of 310 was observed in single-crystal Fe0.05In1.95(Te0.90Se0.10)5 compared with single crystals of the parent material In2Te5.
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Acknowledgements
The authors would like to acknowledge the Indian Department of Science and Technology for partial support through project IR/S2/PU-10/2006. A.D.T. would like to acknowledge partial support from the Center for Energy and Environment, Indian Institute of Technology Patna (IITP).
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Sanchela, A.V., Thakur, A.D. & Tomy, C.V. Improvement in Thermoelectric Properties by Tailoring at In and Te Site in In2Te5 . J. Electron. Mater. 45, 5540–5545 (2016). https://doi.org/10.1007/s11664-016-4778-9
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DOI: https://doi.org/10.1007/s11664-016-4778-9