Abstract
Fluorine-doped indium oxide thin films (In2O3:F) were prepared at 500°C for different fluorine concentrations (0 at.%, 2 at.%, 6 at.% and 10 at.%) using the chemical spray pyrolysis technique. Structure and surface morphology of these films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). XRD analysis revealed that fluorine doped In2O3 thin films exhibit a centered cubic structure with the (400) preferential orientation. The change of the preferential reflection plane from (222) to (400) was found after doping. The doping optimum concentration of thin film crystal structure is obtained witha fluorine ratio equal to 2 at.%. The crystallinity improvement of In2O3:F (2 at.%) film is detected after annealing at 200°C, 300°C, and 400°C in nitrogen gas for 45 min. Transmission and reflection spectra measurements were performed over the wavelength range of 250–2500 nm. The band gap energy increase from 3.10 eV to 3.45 eV was detected after treatment at 400°C. In parallel, the electrical resistivity, deduced from Hall effect measurements, decreases from 428.90 × 10−4 Ω cm to 6.58 × 10−4 Ω cm.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
A. El Hichou, M. Addou, M. Mansori, and J. Ebothé, Sol. Energy Mater. Sol. Cells 93, 609 (2009).
A. Ali, A. Shuhaimi, and Z. Hassan, Appl. Surf. Sci. 288, 599 (2014).
G. Korotcenkov, I. Boris, V. Brinzari, V. Golovanov, Yu Lychkovsky, G. Karkotsky, A. Cornet, E. Rossinyol, J. Rodrigue, and A. Cirera, Sens. Actuators B 103, 13 (2004).
J. Joseph Prince, S. Ramamurthy, B. Subramanian, C. Sanjeeviraja, and M. Jayachandran, J. Cryst. Growth. 240, 142 (2002).
L.J. Meng and M.P. Dos Santos, Thin Solid Films. 322, 56 (1998).
M. Bender, W. Seelig, C. Daube, H. Frankenberger, B. Ocker, and J. Stollenwrek, Thin Solid Films 326, 72 (1998).
E. Benamar, M. Rami, C. Messaoudi, D. Sayah, and A. Ennaoui, Sol. Energy Mater. Sol. Cells 56, 125 (1999).
A. Moses Ezhil Raj, K.C. Lalithambika, V.S. Vidhya, G. Rajagopal, A. Thayumanavan, M. Jayachandran, and C. Sanjeeviraja, Phys. B 403, 544 (2008).
S.M. Rozati and Z. Bargbidi, World Renew. Energy Congr. (2011). doi:10.3384/ecp110572795.
Y.S. Jung, D.W. Lee, and D.Y. Jeon, Appl. Surf. Sci. 221, 136 (2004).
C. Cantalini, W. Wlodarski, H.T. Sun, M.Z. Atashbar, M. Passacantando, A.R. Phani, and S. Santucci, Thin Solid Films 350, 276 (1999).
D. Beena, K.J. Lethy, R. Vinodkumar, V.P. Mahadevan Pillai, V. Ganesan, D.M. Phase, and S.K. Sudheer, Appl. Surf. Sci. 255, 8334 (2009).
J. Liu, D. Wu, and S. Zeng, J. Mater. Process. Technol. 209, 3943 (2009).
P. Prathap, Y.P.V. Subbaiah, M. Devika, and K.T. Ramakrishna Reddy, Mater. Chem. Phys. 100, 375 (2006).
N. Fellahi, M. Addou, Z. Sofiani, M. El Jouad, K. Bahedi, S. Bayoud, M. Haouti, B. Sahraoui, and J.C. Bernede, J. Optoelectron. Adv. Mater. 12, 1087 (2010).
D.W. Sheel and J.M. Gaskell, Thin Solid Films 520, 1242 (2011).
M. Ajili, M. Castagné, and N. KamounTurki, Superlattices Microstruct. 53, 213 (2013).
S. Parthiban, E. Elangovan, K. Ramamurthi, R. Martins, and E. Fortunato, Sol. Energy Mater. Sol. Cells 94, 406 (2010).
X. Zi-qiang, D. Hong, L. Yan, and C. Hang, Mater. Sci. Semicond. Process. 9, 132 (2006).
A. Akkari, M. Reghima, C. Guasch, and N. Kamoun, Turki. J. Mater. Sci. 47, 1365 (2012).
O.M. Berengue, A.D. Rodrigues, C.J. Dalmaschio, A.J.C. Lanfredi, E.R. Leite, and A.J. Chiquito, J. Phys. D 43, 045401 (2010).
Ch.Y. Wang, Y. Dai, J. Pezoldt, B. Lu, Th. Kups, V. Cimalla, and O. Ambacher, Cryst. Growth Des. 8, 4 (2008).
R.K. Gupta, K. Ghosh, S.R. Mishra, and P.K. Kahol, Appl. Surf. Sci. 254, 4018 (2008).
L. Castañeda, A. Maldonado, J. Vega Pérez, M. de la L. Olvera, and C. Torres-Torres, Mater. Sci. Semicond. Process. 26, 288 (2014).
K. Sun, W. Zhou, X. Tang, Z. Huang, F. Luo, and D. Zhu, Surf. Coat. Technol. 206, 4095 (2012).
Z. Yuan, X. Zhu, X. Wang, X. Cai, B. Zhang, D. Qiu, and H. Wu, Thin Solid Films 519, 3254 (2011).
S. Erat, H. Metin, and M. Ari, Mater. Chem. Phys. 111, 114 (2008).
J. Tauc and A. Menth, J. Non-Cryst. Solids 8–10, 569 (1972).
B. Yahmadi, N. Kamoun, C. Guasch, and R. Bennaceur, Mater. Chem. Phys. 127, 239 (2011).
N. Kamoun Allouche, N. Jebbari, C. Guasch, and N. Kamoun Turki, J. Alloys Compd. 501, 85 (2010).
A.V. Moholkar, S.M. Pawar, K.Y. Rajpure, V. Ganesan, and C.H. Bhosale, J. Alloys Compd. 464, 387 (2008).
Acknowledgements
The authors wish to thank Mr. Mehdi Souli from Laboratoire de Physique de la Matière condensée LR99ES13, Faculté des Sciences de Tunis, Tunis El Manar 2092, Tunisia.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Beji, N., Ajili, M. & Turki, N.K. Effect of Heat Treatment Under Nitrogen Atmosphere on Sprayed Fluorine Doped In2O3 Thin Films. J. Electron. Mater. 45, 3251–3258 (2016). https://doi.org/10.1007/s11664-016-4518-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-016-4518-1