Abstract
The fabrication and electrical characterization of InZnO:N thin film transistors (TFTs) were investigated in this work. The InZnO:N film was deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature. In order to optimize the performance of the InZnO:N TFTs, the effect of the oxygen contents in the preparation of the active layer is investigated. We found that an appropriate O2/Ar gas flow ratio is very beneficial for the InZnO:N TFTs, and when the O2/Ar gas flow ratio is at 1/30, the transistor exhibited a high field-effect mobility of 39.3 cm2/Vs, a threshold voltage of 2.4 V and a I ON/OFF ratio of 1.1 × 107.
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Peng, Y., Wang, H., Zhang, W. et al. Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering. J. Electron. Mater. 45, 3340–3342 (2016). https://doi.org/10.1007/s11664-016-4491-8
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DOI: https://doi.org/10.1007/s11664-016-4491-8