Abstract
The effect of Cp2Mg/Ga ratio on the properties of p-GaN was explored by scanning Hall probe, photoluminescence (PL), and atomic force microscopy measurement. It was found that p-GaN has an optimal doping concentration under 2% Cp2Mg/Ga ratio, and higher or lower doping concentration is not beneficial to the conductivity. Hole concentration under the optimum condition is 4.2 × 1017 cm−3 at room temperature. If the Cp2Mg/Ga ratio exceeds the optimum value of 2%, surface morphology and electrical conduction properties become poor, and blue emission at 440 nm, considered deep donor-to-acceptor pair transitions in the PL spectra, are dominant. The decrease in electrical properties indicates the existence of compensating donors because the hole concentration decreases at such high Cp2Mg/Ga ratio. The obtained results indicate that Mg is not incorporated in the exact acceptor site under a heavy doping condition, but acts as a deep donor, instead.
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Acknowledgement
This work is supported by the National Natural Science Foundation of China (Nos. 61475110, 61404089 and 21471111), the Open Research Fund of Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University (Grant No. 201205), Shanxi Provincial Key Innovative Research Team in Science and Technology (2012041011), the Natural Science Foundation of Shanxi Province (No. 2014021019-1).
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Shang, L., Ma, S., Liang, J. et al. The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity. J. Electron. Mater. 45, 2697–2701 (2016). https://doi.org/10.1007/s11664-016-4446-0
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DOI: https://doi.org/10.1007/s11664-016-4446-0