Abstract
The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300°C to 500°C in steps of 100°C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300°C, stoichiometric Zn1O1 at 400°C, and oxygen-rich Zn1O1.3 at 500°C. Resistive switching properties were observed in the ZnO films grown at 300°C and 400°C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500°C. The ZnO film grown at 500°C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300°C or 400°C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.
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References
G.I. Meijer, Science 319, 1625 (2008).
S.Q. Liu, N.J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
S. Seo, M.J. Lee, D.H. Seo, E.J. Jeoung, D.S. Suh, Y.S. Joung, I.K. Yoo, I.R. Hwang, S.H. Kim, I.S. Byun, J.S. Kim, J.S. Choi, and B.H. Park, Appl. Phys. Lett. 85, 5655 (2004).
S. Kim and Y.K. Choi, IEEE Trans. Electron Devices 56, 3049 (2009).
Y.H. Do, J.S. Kwak, Y.C. Bae, K. Jung, H. Im, and J.P. Hong, Appl. Phys. Lett. 95, 093507 (2009).
S.P. Heluani, G. Braunstein, M. Villafuerte, G. Simonelli, and S. Duhalde, Thin Solid Films 515, 2379 (2006).
N. Xu, L.F. Liu, X. Sun, X.Y. Liu, D.D. Han, Y. Wang, R.Q. Han, J.F. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008).
N. Xu, L.F. Liu, X. Sun, C. Chen, Y. Wang, D.D. Han, X.Y. Liu, R.Q. Han, J.F. Kang, and B. Yu, Semicond. Sci. Technol. 23, 075019 (2008).
A. Sawa, Mater. Today 11, 28 (2008).
S.H. Jo, K.H. Kim, and W. Lu, Nano Lett. 9, 870 (2009).
F. Pan, C. Chen, Z.S. Wang, Y.C. Yang, J. Yang, and F. Zeng, Prog. Nat. Sci. 20, 1 (2010).
J.J. Yang, M.D. Pickett, X.M. Li, D.A.A. Ohlberg, D.R. Stewart, and R.S. Williams, Nat. Nanotechnol. 3, 429 (2008).
Y.R. Ryu, T.S. Lee, J.A. Lubguban, H.W. White, B.J. Kim, Y.S. Park, and C.J. Youn, Appl. Phys. Lett. 88, 241108 (2006).
Y.K. Tseng, C.J. Huang, H.M. Cheng, I.N. Lin, K.S. Liu, and I.C. Chen, Adv. Funct. Mater. 13, 811 (2003).
M.S. Arnold, P. Avouris, Z.W. Pan, and Z.L. Wang, J. Phys. Chem. B 107, 659 (2003).
W.Q. Yang, J. Chen, G. Zhu, X.N. Wen, P. Bai, Y.J. Su, Y. Lin, and Z.L. Wang, Nano Res. 6, 880 (2013).
Z.L. Wang and J.H. Song, Science 312, 242 (2006).
Q. Yang, Y. Liu, C.F. Pan, J. Chen, X.N. Wen, and Z.L. Wang, Nano Lett. 13, 607 (2013).
R.M. Yu, C.F. Pan, J. Chen, G. Zhu, and Z.L. Wang, Adv. Funct. Mater. 23, 5868 (2013).
W.Y. Chang, H.W. Huang, W.T. Wang, C.H. Hou, Y.L. Chueh, and J.H. He, J. Electrochem. Soc. 159, 29 (2012).
L.E. Greene, M. Law, J. Goldberger, F. Kim, J.C. Johnson, Y.F. Zhang, R.J. Saykally, and P.D. Yang, Angew. Chem. Int. Ed. 42, 3031 (2003).
J. Zhao, L. Hu, Z. Wang, Y. Zhao, X. Liang, and M. Wang, Appl. Surf. Sci. 229, 311 (2004).
G. Schön, J. Electron Spectrosc. Relat. Phenom. 2, 75 (1973).
P.T. Hsieh, Y.C. Chen, K.S. Kao, and C.M. Wang, Appl. Phys. A 90, 317 (2008).
D.S. Park, Y.J. Tak, J.Y. Kim, and K.J. Yong, Surf. Rev. Lett. 14, 1061 (2007).
M. Hecq, A. Hecq, J.P. Delrue, and T. Robert, J. Less Common. Met. 64, 25 (1979).
Y. Abe, H. Yanagisawa, and K. Sasaki, Jpn. J. Appl. Phys. 37, 4482 (1998).
T.G. Seong, M.R. Joung, J.W. Sun, M.K. Yang, J.K. Lee, J.W. Moon, J. Roh, and S. Nahm, Jpn. J. Appl. Phys. 51, 041102 (2012).
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Bae, S., Kim, DS., Jung, S. et al. Bipolar Switching Behavior of ZnO x Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures. J. Electron. Mater. 44, 4175–4181 (2015). https://doi.org/10.1007/s11664-015-3935-x
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DOI: https://doi.org/10.1007/s11664-015-3935-x