Abstract
Highly conducting and transparent Ga-doped ZnO (GZO) thin films have been grown on transparent substrates at different growth temperatures with Ga content varying from 0.01% to 10%. All films showed pronounced c-axis orientation corresponding to hexagonal wurtzite structure. The minimum resistivity of 4.3 × 10−4 Ω cm was reproducibly obtained in GZO thin film doped with 2% Ga and grown at 600°C. We have further shown that highly conducting transparent GZO thin film can be used as a Schottky contact in copper phthalocyanine (CuPc)-based Schottky diodes. The capacitance–voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes show similar built-in potential (V bi) of 0.98 V, which is close to the difference in work function between Au (5.2 eV) and Al or GZO (4.2 eV), establishing that GZO behaves as a metal electrode with work function similar to Al. Similar values of acceptor concentration (∼1015 cm−3) in CuPc were obtained from the capacitance–voltage characteristics of the Al/CuPc/Au and GZO/CuPc/Au Schottky diodes. These observations indicate the absence of interface states at the metal/organic interface in CuPc-based Schottky diodes.
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Acknowledgements
We acknowledge the Advanced Instrumentation Research Facility (AIRF) of JNU for providing XRD facilities for this work. This work was partly supported by DST, Govt. of India.
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Singh, B., Ghosh, S. Highly Conducting Gallium-Doped ZnO Thin Film as Transparent Schottky Contact for Organic- Semiconductor-Based Schottky Diodes. J. Electron. Mater. 44, 2663–2669 (2015). https://doi.org/10.1007/s11664-015-3783-8
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DOI: https://doi.org/10.1007/s11664-015-3783-8