Mg-doped InGaN (Mg-InGaN) films have been deposited directly on Si (100) substrates by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. The cermet targets with a constant 5% indium content were made by hot pressing the mixture of metallic In, Ga, and Mg powders and ceramic GaN powder. The Mg-InGaN films had a wurtzite structure with a preferential (\( 10\bar{1}0 \)) growth plane. The SEM images showed that Mg-InGaN films were smooth, continuous, free from cracks and holes, and composed of nanometer-sized grains. As the Mg dopant content in Mg-InGaN increased to 7.7 at.%, the film was directly transformed into p-type conduction without a post-annealing process. It had high hole concentration of 5.53 × 1018 cm−3 and electrical mobility of 15.7 ± 4.2 cm2 V−1 s−1. The over-doping of Mg in InGaN degraded the electrical properties. The bandgap of Mg-InGaN films decreased from 2.92 eV to 2.84 eV, as the Mg content increased from 7.7% to 18.2%. The constructed p-type Mg-InGaN/n-type GaN diode was used to confirm the realization of the p-type InGaN by sputtering technique.
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Kuo, DH., Li, CC., Tuan, T.T.A. et al. Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering. J. Electron. Mater. 44, 210–216 (2015). https://doi.org/10.1007/s11664-014-3406-9
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DOI: https://doi.org/10.1007/s11664-014-3406-9