Abstract
Magnetic semiconductors with Curie temperatures higher than room temperature show potential for developing spintronic devices with combined data processing and storage functions for next-generation computing systems. In this study, we present an n-type Co19.8Fe8.6Nb4.3B6.0O61.3 magnetic semiconductor with a high Curie temperature of ∼559 K. This magnetic semiconductor has a room-temperature resistivity of ∼2.10 × 104 Å cm and a saturation magnetization of ∼76 emu/cm3. The n-type Co19.8Fe8.6Nb4.3B6.0O61.3 magnetic semiconductor was deposited on p-type silicon to form a heterojunction, exhibiting a rectifying characteristic. Our results provide the design principles for discovering high Curie temperature magnetic semiconductors with determined conduction types, which would play an essential role in realizing nonvolatile spin-based transistors that break free from the confines of currently established Si-based information technology.
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This work was supported by the National Natural Science Foundation of China (Grant No. 51922053).
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Jiao, YZ., Louzguine-Luzgin, D.V., Yao, KF. et al. A room-temperature magnetic semiconductor from a Co-Fe-Nb-B metallic glass. Sci. China Phys. Mech. Astron. 66, 246111 (2023). https://doi.org/10.1007/s11433-022-2042-x
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DOI: https://doi.org/10.1007/s11433-022-2042-x