Abstract
With the purpose of investigating the origin of ferromagnetism (FM), Mn-doped ZnO thin films had been fabricated by radio frequency (rf) magnetron sputtering and subsequent anneal process. The characterization of the Mn-doped ZnO thin films was conducted by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and superconducting quantum interference device (SQUID). With increasing the anneal temperature from 300°C to 700°C for 3 min, the influence on magnetism of the Mn-doped ZnO thin films is slight. While extending the anneal time from 3 to 50 min at 300°C, the influence on magnetism is obvious and the Mn-doped ZnO thin films with 30 min clearly demonstrate FM. Compared with the effect of oxygen vacancy and substitutional Mn2+ on the ferromagnetic behavior, OV plays the main role in inducing FM of the Mn-doped ZnO thin films with good crystal structure.
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Guan, S., Nasu, N., Zhang, Y. et al. Oxygen vacancy and Mn2+ induced ferromagnetism in Mn-doped ZnO thin films. Sci. China Technol. Sci. 62, 1755–1759 (2019). https://doi.org/10.1007/s11431-018-9463-6
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DOI: https://doi.org/10.1007/s11431-018-9463-6