Abstract
A polycrystalline diamond film is grown on a 2 inch Si substrate using a microwave-plasma chemicalvapor-deposition technique. The high quality of the diamond films is confirmed by Raman spectra. A multiple-step procedure is used for local etching of the substrate to form the pattern of an array of 50 diamond membranes with the diameter in a range from 150 to 300 μm. The morphology of the membranes is examined using scanning electron microscopy. The membranes obtained can be used as the base material for the fabrication of pressure sensors, X-ray detectors and scintillators, and in quantum optics as optical resonators for single-color centers in diamond.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
L. S. Pan and D. R. Kania, Diamond: Electronic Properties and Applications, Springer Science & Business Media (2013).
H. Windischmann and G. F. Epps, J. Appl. Phys., 68, 5665 (1990).
V. S. Sedov, S. V. Kuznetsov, V. G. Ralchenko, et al., Diam. Relat. Mater., 72, 47 (2017).
V. Sedov, S. Kouznetsov, A. Martyanov, et al., ACS Appl. Nano Mater., 3, 1324 (2020).
C. F. Wang, R. Hanson, D. D. Awschalom, et al., Appl. Phys. Lett., 91, 201112 (2007).
A. Schmidt, J. Bernardoff, K. Singer, et al., Physica Status Solidi A, 216, 1900233 (2019).
V. G. Ralchenko, E. Pleuler, F. X. Lu, et al., Diam. Relat. Mater., 23, 172 (2012).
S. Drijkoningen, S. D. Janssens, P. Pobedinskas, et al., Sci. Rep., 6, 1 (2016).
S. D. Janssens, D. Vazquez-Cortes, A. Giussani, et al., Diam. Relat. Mater., 98, 107511 (2019).
M. E. Belousov, E. A. Il’ichev, A. E. Kuleshov, et al., Tech. Phys. Lett., 38, 225 (2012).
M. A. Green and M. J. Keevers, Prog. Photovolt. Res. Appl., 3, 189 (1995).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Sedov, V.S., Voronin, A.A., Komlenok, M.S. et al. Laser-Assisted Formation of High-Quality Polycrystalline Diamond Membranes. J Russ Laser Res 41, 321–326 (2020). https://doi.org/10.1007/s10946-020-09881-x
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10946-020-09881-x