Abstract
We realize for the first time an experimental investigation of the IR and visible luminescence of SiGe/Si heterostructures with quantum well subjected to an external anisotropic deformation. We show that tensile strain along the [100] direction enhances the absolute and relative intensities of visible luminescence by a factor of 7/3 at a temperature of 5 K. This effect is absent for a tensile strain along the [110] direction. We explain the phenomenon observed in view of the model of single-photon biexciton recombination for the system in which the bottom of the conduction band is formed by only two opposite electronic valleys.
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Nikolaev, S.N., Krivobok, V.S., Davletov, E.T. et al. Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation. J Russ Laser Res 39, 83–89 (2018). https://doi.org/10.1007/s10946-018-9692-6
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DOI: https://doi.org/10.1007/s10946-018-9692-6