Abstract
In this novel current work, double-face porous Si (Df-porous Si) was established via the double-beam laser-assisted etching (DB-LAE) technique, using two similar diode lasers, operating at 630 nm wavelength and 60 mW power. The work involved the development and study of Df-porous Si layer of Al/Psi/Si/Al with one-face, parallel, and series connections and Df-porous Si layer of Al/PSi/ Si/PSi/Al gas sensors under low concentrations (0.25–1 ppm) of CO gas molecules at room temperature. A significant improvement had been achieved in gas sensing characteristics involving current-frequency, sensitivity, stability, and temporal response in Df-porous Si with parallel connections when compared to the Df-porous Si sensors with one-face, and series connections . Low values (0.1, 0.06, and 0.19 ppm) of LOD for CO molecules in one face and Df-porous Si sensors at parallel and series connections were obtained, respectively. These improved characteristics were ascribed to the large sensing area and in parallel connections capacitance of the Df-porous Si layers.
Similar content being viewed by others
Data availability
The datasets generated during and/or analyzed during the current study are available from the corresponding author on reasonable request.
Code availability
Not applicable.
References
R.M. Hannun, A.H. Abdul Razzaq, IOP Conf. Ser. Earth Environ. Sci. 1002, 012008 (2022)
R. El Morabet, Encyclopedia of Environmental Health (Elsevier, Amsterdam, 2019), pp.278–286
F. Alanazi, Appl. Sci. 13, 6016 (2023)
I. Levitsky, Sensors 15, 19968 (2015)
H.K. Abbas, A.M. Alwan, A.B. Dheyab, J. Mater. Sci. Mater. Electron. 34, 1835 (2023)
A.A. Jabbar, A.M. Alwan, A.J. Haider, Plasmonics 13, 1171 (2018)
K. Rumpf, P. Granitzer, P. Poelt, M. Albu, Phys. Status Solidi C 8, 1808 (2011)
R. Martı́n-Palma, J. Martı́nez-Duart, L. Li, R. Levy, Mater. Sci. Eng. C 19, 359 (2002)
T.D. James, A.J. Keating, G. Parish, L. Faraone, C.A. Musca, Electrochem. Solid-State Lett. 10, D130 (2007)
N. Gabouze, S. Belhousse, H. Cheraga, N. Ghellai, Y. Ouadah, Y. Belkacem, A. Keffous, Vacuum 80, 986 (2006)
M.Q. Zayer, A.M.A.M. Alwan, A.S. Ahmed, A.B.A.B. Dheyab, A.J. Allaa, Curr. Appl. Phys. 19, 1024 (2019)
A.A. Jabbar, L.A. Wali, A.M. Alwan, J. Mater. Sci. Mater. Electron. 33, 24571 (2022)
G. Gautier, T. Defforge, S. Desplobain, J. Billoué, M. Capelle, P. Povéda, K. Vanga, B. Lu, B. Bardet, J. Lascaud, C. Seck, A. Fèvre, S. Menard, L. Ventura, ECS Trans. 69, 123 (2015)
D. Liu, K. Lipponen, P. Quan, X. Wan, H. Zhang, E. Mäkilä, J. Salonen, R. Kostiainen, J. Hirvonen, T. Kotiaho, H.A. Santos, A.C.S. Biomater, Sci. Eng. 4, 2308 (2018)
A.M. Alwan, A.J. Hayder, A.A. Jabbar, Surf. Coatings Technol. 283, 22 (2015)
A.M. Alwan, A.A. Yousif, L.A. Wali, Indian J. Pure Appl. Phys. 55, 813 (2017)
H.M. Martínez, N.E. Rincon, J. Torres, J.E. Alfonso, Microelectron. J. 39, 1354 (2008)
N.M. Ahmed, Y. Al-Douri, A.M. Alwan, A.A. Jabbar, G.E. Arif, Procedia. Eng. 53, 393 (2013)
S. Naama, T. Hadjersi, A. Keffous, G. Nezzal, Mater. Sci. Semicond. Process. 38, 367 (2015)
V. Lehmann, U. Gösele, Appl. Phys. Lett. 58, 856 (1991)
W.K. Hamoudi, A.M. Alwan, D. Sulaiman, Opt. Quantum Electron. 52, 351 (2020)
R.B. Rashid, A.M. Alwan, M.K. Abood, Mater. Sci. Eng. B 303, 117258 (2024)
R.B. Rashid, A.M. Alwan, A.B. Dheyab, Appl. Phys. A 130, 72 (2024)
N. Naderi, M.R. Hashim, T.S.T. Amran, Superlattices Microstruct. 51, 626 (2012)
A.M. Alwan, A.A. Yousif, L.A. Wali, Plasmonics 13, 1191 (2018)
R. Vercauteren, G. Scheen, J.-P. Raskin, L.A. Francis, Sens. Actuator A Phys. 318, 112486 (2021)
S. Ozdemir, J.L. Gole, MRS Proc. 1253, 1253 (2010)
A.B. Dheyab, A.M. Alwan, M.Q. Zayer, Plasmonics 14, 501 (2019)
S. Ozdemir, J.L. Gole, ECS Trans. 16, 379 (2008)
A.M. Alwan, A.B. Dheyab, Appl. Nanosci. 7, 335 (2017)
L.A. Wali, K.K. Hasan, A.M. Alwan, Plasmonics 15, 985 (2020)
Y. Zhang, W. Chu, A.D. Foroushani, H. Wang, D. Li, J. Liu, C.J. Barrow, X. Wang, W. Yang, Materials (Basel) 7, 5169 (2014)
L. Canham, Properties of Porous Silicon (INSPEC, The Institution of Electrical Engineers, London, 1997)
R.B. Rashid, A.M. Alwan, M.S. Mohammed, Mater. Chem. Phys. 293, 126898 (2023)
A.M. Alwan, A.A. Jabbar, Mod. Appl. Sci. 5, 106 (2011)
D.A. Hashim, A.M. Alwan, M.F. Jawad, J. Electrochem. Soc. 165, B773 (2018)
A.M. Alwan, D.A. Hashim, M.F. Jawad, Solid State Electron. 153, 37 (2019)
A.M. Alwan, D.A. Hashim, M.F. Jawad, Gold Bull. 51, 175 (2018)
A.M. Alwan, Eng. Tech 25, 1143 (2007)
A.M. Alwan, O.A. Abdulrazaq, Int. J. Mod. Phys. B 22, 417 (2008)
A. Ramizy, Z. Hassan, K. Omar, Sci. China Technol. Sci. 54, 58 (2011)
B. Ünal, S.C. Bayliss, J. Phys. D Appl. Phys. 30, 2763 (1997)
Acknowledgements
The authors gratefully acknowledge the financial and technical support provided by University of Technology& Directorate of Material Research, Ministry of Science and Technology, Baghdad, Iraq. The authors would like to thank Mustansiriyah University (www.uomustansiriyah. edu.iq), Baghdad-Iraq for their support in the present work.
Funding
The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.
Author information
Authors and Affiliations
Contributions
All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by Alwan M. Alwan, Amer B. Dheyab, Layla A. Wali, and Walid K. Hamoudi The first draft of the manuscript was written by Alwan M. Alwan and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
Corresponding author
Ethics declarations
Conflict of interest
The authors declare no competing interests.
Ethical approval
The authors assure that this material is the authors’ own original work, which has not been previously published elsewhere. The paper is not currently being considered for publication elsewhere. The paper reflects the authors’ own research and analysis in a truthful and complete manner. The paper properly credits the meaningful contributions of co-authors and co-researchers. The results are appropriately placed in the context of prior and existing research. All the authors have been personally and actively involved in substantial work leading to the paper, and will take public responsibility for its content. This research does not involve human participants or animal.
Consent to participate
All the authors have been personally and actively involved in substantial work leading to the paper and will take public responsibility for its content.
Consent for publication
All the authors have been personally and actively involved in substantial work leading to the paper and consent to publish of the submitted paper.
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
About this article
Cite this article
Alwan, A.M., Dheyab, A.B., A.Wali, L. et al. Synthesis of a Df-porous Si layer of mesostructure to develop the mechanisms of CO sensors. J Mater Sci: Mater Electron 35, 1432 (2024). https://doi.org/10.1007/s10854-024-13190-3
Received:
Accepted:
Published:
DOI: https://doi.org/10.1007/s10854-024-13190-3