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Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range

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Abstract

In this paper, an optically gated vertical tunnel field-effect transistor (OG-VTFET) based photodetector with different gate oxides is investigated to detect incident light with narrow-separated wavelengths (~ 100 nm) in the near-infrared (NIR) range (750–1050 nm). The optical performance parameters such as spectral sensitivity (Sn), signal-to-noise ratio (SNR), quantum efficiency (ƞ), and responsivity (R) are observed to improve in the NIR range due to improvement in the ON-current (ION), subthreshold swing (SSavg), and dark current (IDark) offered by OG-VTFET. OG-VTFET with HfO2 as gate oxide shows enhancement in the dual-line tunneling of charge carriers around the source-channel (S–C) interface, which eventually leads to improvement in ION and SSavg compared to SiO2 at wavelengths (λ) of light ranging from 750 to 1050 nm. Therefore, a high Sn of ~200 is achieved for the proposed photodetector under the light condition when HfO2 is used as a gate oxide. However, reduction in the dark current (Idark) using a low-\(K\) dielectric i.e. SiO2 as gate oxide reports a higher SNR value of ~82.2 dB compared to HfO2 which offers ~60 dB of SNR at λ of 750 nm. Moreover, a portion of the channel is elevated around the gate corner to mitigate the corner effects at the S–C interface, which leads to an increase in the light-to-dark current ratio (Ilight/Idark) for the proposed photodetector when λ varies from 1050 to 750 nm. In addition, a heavily doped pocket deposited around the source region provides a better electric field at the S–C interface after an optical voltage is developed across the photosensing gate for the incident light falling on it. The quantum efficiency (ƞ) and responsivity (R) of OG-VTFET-based photodetector with HfO2 gate oxide are eventually improved as more electron–hole pairs (EHPs) are generated under the illuminated state even at high λ of 1050 nm. ƞ and R are reported to be 2.1 and 1.77 A/W, respectively for OG-VTFET-based photodetector at λ of 1050 nm. Finally, the reliability concern of the proposed photodetector is examined by incorporating interface-trap charges (ITCs) at the oxide–semiconductor (O–S) interface, and an insignificant change in the SNR value is observed when SiO2 is used as the gate oxide.

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No data was used for the research described in the article Conceptualization.

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Acknowledgements

The authors would like to express their gratitude to VIT-AP University, Amaravati for providing the Sentaurus TCAD simulator for simulation work.

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Authors and Affiliations

  1. School of Electronics Engineering, VIT-AP University, Amaravati, 522237, India

    Anil Kumar Pathakamuri, Chandan Kumar Pandey & Tammisetti Ashok

Authors
  1. Anil Kumar Pathakamuri
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  2. Chandan Kumar Pandey
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  3. Tammisetti Ashok
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Contributions

Anil Kumar Pathakamuri and Tammisetti Ashok: Writing—original draft, Software, Investigation, Formal analysis. Chandan Kumar Pandey: Review & editing, Supervision, Resources, Project administration, Conceptualization.

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Correspondence to Chandan Kumar Pandey.

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Pathakamuri, A.K., Pandey, C.K. & Ashok, T. Performance analysis of highly sensitive vertical tunnel FET for detecting light in near-IR range. J Mater Sci: Mater Electron 35, 1238 (2024). https://doi.org/10.1007/s10854-024-12953-2

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