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Strengthened dielectric relaxation and energy efficiency of Bi(Mg0.5Hf0.5)O3-doped Ba(Ti0.8Sn0.2)O3 ceramics

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Abstract

Bi(Mg0.5Hf0.5)O3 (BMH) has been frequently exploited to engineer the material’s phase structure, micromorphology, dielectric, piezoelectric, and energy storage performance of BaTiO3 (BT)-based ceramics for the optimization of multifunctional dielectrics. Herein, combined with the Ba(Ti0.8Sn0.2)O3 relaxor, (1 – x)Ba(Ti0.8Sn0.2)O3–xBi(Mg0.5Hf0.5)O3 (BTS-xBMH) ceramic samples were prepared through a solid-state reaction process. The micromorphology, dielectric properties, ferroelectric properties, and energy storage performance of BTS-xBMH ceramics were engineered by increasing BMH content. The addition of BMH can refine the grain size, increase the relaxation degree, raise the breakdown strength, and facilitate the production of the polar nanoregions in the BTS-xBMH ceramics. Compared to pure BTS, the energy efficiency of BTS-BMH is remarkably enhanced, which originates from the disruption of the ferroelectric long-range order owing to the BMH modification. At the maximum applied field of 100 kV/cm, the largest energy density of Wrec = 0.3 J/cm3 was realized at the composition of x = 0.05. The highest energy efficiency of η = 99% was acquired for x = 0.15 at 110 kV/cm. Moreover, the energy efficiency for x = 0.15 displays good temperature stability. These findings can guide the further optimization design of environmentally friendly BT-based ceramic capacitors for energy storage applications.

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  1. School of Materials Science and Engineering, Jiamusi University, Jiamusi, 154007, China

    Qinglin Gong & Ming Hu

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  1. Qinglin Gong
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Material preparation, data collection, and analysis were performed by Qinglin Gong. The first draft of the manuscript was written by Qinglin Gong. Ming Hu contributed to the study conception and design. Ming Hu contributed to review the draft of the manuscript. All authors commented on previous versions of the manuscript, read and approved the final manuscript.

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Gong, Q., Hu, M. Strengthened dielectric relaxation and energy efficiency of Bi(Mg0.5Hf0.5)O3-doped Ba(Ti0.8Sn0.2)O3 ceramics. J Mater Sci: Mater Electron 35, 1144 (2024). https://doi.org/10.1007/s10854-024-12864-2

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