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RF magnetron sputtering of Zn2SnO4 thin films: optimising microstructure, optical and electrical properties for photovoltaics

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Abstract

Zn2SnO4 (ZTO) is a potential n-type material that can be used as a buffer layer in thin-film solar cells. In this work, ZTO thin films were deposited on silicon (100) and quartz (Y-cut) substrates using RF magnetron sputtering from a ceramic target prepared by the mixture of Tin Oxide (SnO2) and Zinc Oxide (ZnO) in a 2:1 ratio. The effects of RF power, deposition time and post-deposition annealing temperature on the structural, optical, morphological, and electrical properties of the as-grown films were studied with various techniques. The phase formation of crystalline inverse spinel cubic ZTO thin film has been verified by characterising through X-ray diffraction and Raman spectrometer. X-ray photoelectron spectroscopy was used to confirm the oxidation state of the films. Optical analysis carried out by a UV–visible spectrophotometer exhibits that the film has a high transmittance value of 80–85% in the visible range. The optical band gap of the films was calculated and compared. Surface characteristics such as particle size, shape, and roughness have been investigated using atomic force microscopy, and the film’s surface shows a uniformly smooth nature. Energy dispersive X-ray analysis further confirms the presence of Zinc (Zn), Tin (Sn) and Oxygen (O) elements in the deposited films. The electrical properties of the optimised ZTO films were analysed through hall measurements, unveiling the n-type conductivity of the films with elevated carrier concentration and mobility, underscoring their suitability for application in thin-film solar cells.

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The datasets utilised or examined in the present study can be obtained upon a reasonable request from the corresponding author.

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Acknowledgements

The authors extend their appreciation to the Central Instrumentation Facility (CIF) at Pondicherry University for XPS, Raman, and optical characterisations. The authors acknowledge Dr. D. Pamu of Indian Institute of Technology Guwahati for helping in target preparation. Gratitude is expressed to DST-FIST Phase-II for GIXRD Department of Physics, Pondicherry University. The authors also express thanks to Dr. E. Senthil Kumar of the Nanotechnology Research Center (NRC) at SRM Institute of Science and Technology for granting access to Hall Measurements facilities. Special appreciation goes to Dr. D. Selvakumar, Scientist-G at DEBEL (DRDO) in Bangalore, for performing the EDAX analysis. NTS acknowledges Pondicherry University for the research fellowship provided.

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  1. Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University, Kalapet, Puducherry, 605 014, India

    Nirmal T. Shajan & D. Bharathi Mohan

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NTS: Investigation, methodology, formal analysis, data curation, writing—original draft preparation. DBM: Conceptualization, visualisation, supervision, funding acquisition, writing—reviewing & editing.

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Correspondence to D. Bharathi Mohan.

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Shajan, N.T., Bharathi Mohan, D. RF magnetron sputtering of Zn2SnO4 thin films: optimising microstructure, optical and electrical properties for photovoltaics. J Mater Sci: Mater Electron 35, 882 (2024). https://doi.org/10.1007/s10854-024-12648-8

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