Abstract
The authors have observed the influence of double quantum well and δ-doping for a triple barrier AlGaAs/GaAs resonant tunneling diode (RTD) on device performance, which has been investigated by means of numerical simulation using contact block reduction (CBR) technique. The introduction of Si δ-doping in triple barrier RTD tries to dominant the transport mechanism and increases the density of electrons between the tunneling energy levels. It can also increase the energy of electrons in resonant states at a lower voltage. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimized values of the quantum well and the triple barrier have been observed through mapped local density of states along with the electrical and structural performance of the device. In addition to this, the transmission coefficient of the device has been optimized with varying doping concentration, barrier length, and δ-doping. The most evident electrical parameters, a peak current density of 21.7 × 103 KA/m2, a peak-to-valley current ratio of 11.12, could be achieved by designing RTD with the active region structure of δ-doped Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As (2 nm-4 nm-2 nm-4 nm-2 nm). The results obtained in this paper may be useful to improve the device characteristics of resonant tunneling nanostructures.
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Acknowledgements
Special thanks to Dr. S. Birner, Nextnano GmbH, Munchen, Germany to provide the simulation package of Nextnano3 for this research.
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Singh, M.M., Kumar, A., Ratnesh, R.K. (2022). Observation of Proposed Triple Barrier δ-Doped Resonant Tunneling Diode. In: Verma, P., Charan, C., Fernando, X., Ganesan, S. (eds) Advances in Data Computing, Communication and Security. Lecture Notes on Data Engineering and Communications Technologies, vol 106. Springer, Singapore. https://doi.org/10.1007/978-981-16-8403-6_63
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