Abstract
Studies of coupled magnetic and ferroelectric phases have significantly intensified in the last decade, motivated by fundamental questions about ferroic order coexistence and their potential for nanoelectronics. Hybrid ferromagnetic/ferroelectric materials in which magnetoelectric interactions arise from charge modulation, exchange coupling, or strain transfer at composite interfaces are particularly promising because they allow for electric-field control of magnetism at temperatures that are compatible with practical device applications. In this chapter, recent developments in this field are reviewed, with emphasis on magnetoelectric coupling in thin-film heterostructures, ferromagnetic/ferroelectric domain interactions, and electronic transport in ferroelectric tunnel junctions.
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Abbreviations
- FMR:
-
Ferromagnetic resonance
- FTJ:
-
Ferroelectric tunnel junction
- ME:
-
Magnetoelectric
- MERAM:
-
Magnetoelectric random access memory
- MRAM:
-
Magnetic random access memory
- MTJ:
-
Magnetic tunnel junction
- PEEM:
-
Photoemission electron microscopy
- PFM:
-
Piezoresponse force microscopy
- SQUID:
-
Superconducting quantum interference device
- STT:
-
Spin transfer torque
- TER:
-
Tunneling electroresistance
- TMR:
-
Tunneling magnetoresistance
- VSM:
-
Vibrating sample magnetometry
- XANES:
-
X-ray absorption near edge spectroscopy
- XMCD:
-
X-ray magnetic circular dichroism
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Acknowledgments
The author thanks Kévin Franke and Tuomas Lahtinen for their contribution to the figures and John Burton, Evgeny Tsymbal, Chang-Beom Eom, Marin Alexe, Vincent Garcia, and Manuel Bibes for providing data. Financial support from the European Research Council (ERC-2012-StG 307502-E-CONTROL) is gratefully acknowledged.
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van Dijken, S. (2015). Hybrid Ferromagnetic/Ferroelectric Materials. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7604-3_18-1
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