Abstract
The first generation spintronics based on the giant magneto-resistance effect (GMR, the 2007 Nobel Prize) in the magnetic multilayers has already generated huge impact to the mass data storage industries. The second generation spintronics based on magnetic-semiconductor hybrid structures aims to develop new spin based devices such as spin transistors and spin logic, which will not just improve the existing capabilities of electronic transistors, but will have new functionalities. These spin devices have the potential to integrate both data storage and processing, enabling future computers to run faster and at the same time consume less power. One of the major challenges for the development of the second generation spintronics is the integration of the magnetic and semiconductor materials. In this chapter, we will present the growth, interface magnetism and magneto-transport of several important magnetic/semiconductor hybrid spintronic structures, in particular, with III-V semiconductors such as GaAs and InAs. The magnetic materials include both ferromagnetic metals, Fe, Co and Ni and half metallic magnetic oxides, where a large spin polarisation at the Fermi is expected. The chapter will also report the modified magnetic properties in the patterned single crystal dots due to either dipole interaction or intrinsic structure changes.
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Abbreviations
- AFM:
-
Atomic force microscopy
- APB:
-
Antiphase boundary
- BCC:
-
Body centered cubic
- CMOS:
-
Complementary metal-oxide-semiconductor
- DFT:
-
Density function theory
- DMS:
-
Diluted magnetic semiconductor
- DOS:
-
Density of state
- EDX:
-
Energy dispersive X-ray
- EM:
-
Electron microscope
- FCC:
-
Face centered cubic
- FET:
-
Field effect transistor
- FM:
-
Ferro- or ferri-magnetic material
- GMR:
-
Giant magnetoresistance
- HCP:
-
Hexagonal close packing
- HM:
-
Half metals
- HMS:
-
Hybrid magnetic semiconductor
- IT:
-
Information technology
- LED:
-
Light emission diode
- LEED:
-
Low energy electron diffraction
- MBE:
-
Molecular beam epitaxy
- ML:
-
Mono-layer
- MOCVD:
-
Metal-organic chemical vapor deposition
- MOKE:
-
Magneto-optical Kerr effect
- MOSFET:
-
Metal oxide semiconductor FET
- MR:
-
Magnetoresistance
- MRAM:
-
Magnetic random access memory
- MTJ:
-
Magnetic tunnel junction
- PLD:
-
Pulsed laser deposition
- QHE:
-
Quantum Hall effect
- QSHE:
-
Quantum spin Hall effect
- QW:
-
Quantum well
- RAM:
-
Magnetic random access memory
- RHEED:
-
Reflection high energy electron diffraction
- RKKY:
-
Ruderman-Kittel-Kasuya-Yosida
- RT:
-
Room temperature
- SC:
-
Semiconductor
- SE:
-
Secondary electron
- SEM:
-
Scanning electron microscope
- SHE:
-
Spin Hall effect
- SQUID-VSM:
-
Superconducting quantum interference devices–vibrating sample magnetometer
- STM:
-
Scanning tunneling microscopy
- SV:
-
Spin-valve
- TEM:
-
Transmission electron microscopy
- TEY:
-
Total electron yield
- TFY:
-
Total florescence yield
- TI:
-
Topological insulator
- TRS:
-
Time reversal symmetry
- TSP:
-
Titanium sublimation pump
- UHV:
-
Ultrahigh vacuum
- UMA:
-
Uniaxial magnetic anisotropy
- XMCD:
-
X-ray magnetic circular dichroism
- XPS:
-
X-ray photoelectron spectroscopy
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Xu, Y. et al. (2014). Magnetic III–V Semiconductor-Based Hybrid Structures. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-7604-3_14-1
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DOI: https://doi.org/10.1007/978-94-007-7604-3_14-1
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