Abstract
Polymer semiconductor field-effect transistors are expected to be next-generation devices for use as drivers in displays and a variety of other technological applications. They are of particular interest because of their low-cost fabrication, solution processability, mechanical flexibility, and large-area fabrication capabilities. An overview on the development of polymer-based organic field-effect transistors (OFETs) is discussed with emphasis on device configurations, choice of materials, and device engineering.
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Abbreviations
- μCP:
-
Microcontact printing
- BBL:
-
Poly(benzobisimidazobenophenanthroline)
- BC/TG:
-
Bottom contact/top gate
- BC/BG:
-
Bottom contact/bottom gate
- BTS:
-
Benzyltrichlorosilane
- CMOS:
-
Complementary metal-oxide-semiconductor
- DMSO:
-
Dimethyl sulfoxide
- F8T2:
-
Poly(9,9′-dioctylfluorene-co-bithiophene)
- FTS:
-
(Tridecafluoro-1,1,2,2-tetrahydrooctyl) trichlorosilane
- HMDS:
-
Hexamethyldisilazane
- HOMO:
-
Highest occupied molecular orbital
- ITO:
-
Indium tin oxide
- LUMO:
-
Lowest unoccupied molecular orbital
- MIMIC:
-
Micro-molding in capillaries
- MTP:
-
Metal transfer printing
- nTP:
-
Nano-transfer printing
- OFET:
-
Organic field-effect transistor
- OTS:
-
Octadecyltrichlorosilane
- P3HT:
-
Poly(3-hexylthiophene)
- PBTTT:
-
Poly(2,5-bis(3-alkylthiophene-2-yl)-thieno[3,2-b]thiophene)
- PCBM:
-
[6,6]-Phenyl C61-butyric acid methyl ester
- PDMS:
-
Polydimethylsiloxane
- PEDOT/PSS:
-
Poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid
- PMMA:
-
Poly(methylmethacrylate)
- PQT-12:
-
Poly(3,3‴-didodecylquaterthiophene)
- PS-PMMA-PS:
-
Poly(styrene-block-methylmethacrylate-block-styrene)
- PVP:
-
Polyvinylphenol
- SAM:
-
Self-assembled monolayer
- SEM:
-
Scanning electron micrograph
- TC/BG:
-
Top contact/bottom gate
- VTS:
-
7-Octenyltrichlorosilane
Further Reading
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Liu, F., Ferdous, S., Briseno, A.L. (2015). Organic TFTs: Polymers. In: Chen, J., Cranton, W., Fihn, M. (eds) Handbook of Visual Display Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35947-7_51-2
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