Abstract
The present chapter describes the physical properties of dielectrics and includes the following data:
-
1.
Low-frequency properties , i. e., density and Mohs hardness, thermal conductivity, static dielectric constant, dissipation factor (loss tangent), elastic stiffness and elastic compliance, and piezoelectric strain
-
2.
High-frequency (optical) properties , i. e., elastooptic and electrooptic coefficients, optical transparency range, two-photon absorption coefficient, refractive indices and their temperature variation, dispersion relations (Sellmeier equations), and second and/or third-order nonlinear dielectric susceptibilities.
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A large amount of the information in this chapter is taken from the compilations of low- and high-frequency properties of dielectric crystals in Landolt–Börnstein, Group III, Vols. 29 and 30, especially Vol. 30b. Since 1992–1993, the date of publication of the first of these volumes, a large amount of new data on the physical properties of dielectrics has appeared in the literature. In particular, various linear and nonlinear optical properties of new crystals in the borate family have been (re)measured. Among these are: beta barium borate (GlossaryTerm
BBO
), lithium triborate (GlossaryTermLBO
), cesium borate (GlossaryTermCBO
), cesium lithium borate (GlossaryTermCLBO
) and new organic crystals such as deuterated l-arginine phosphate (GlossaryTermDLAP
) and 2-methyl-4-nitro-N-methylaniline (MNMA). This situation has encouraged us to refresh the knowledge about these crystals by adding new data from publications from the last decade. We have also included the most commonly used isotropic materials. The criteria for the selection of 124 dielectrics out of several hundred were their wide range of application and the availability of most of the above-mentioned data.One of our aims was to produce a reader-friendly compilation. For this purpose, all data on dielectrics are presented in a unified form in tables that are similar for both isotropic materials and crystals of various symmetry classes. Moreover, all data for each particular material are collected together in one place. Sections 23.1–23.2 serve as a brief introduction to the various physical phenomena and to the definitions, symbols, and abbreviations used. All numerical data are presented in Sect. 23.4. The tables in this chapter are arranged according to piezoelectric classes in order of decreasing symmetry. Guidelines for searching for (and finding!) the required parameter in these tables can be found in Sect. 23.3.
The following Table 23.1 presents a list of the 124 different substances which have been selected to be described in Sect. 23.4.
The physical quantities used to describe the properties of the dielectric substances are drawn up in Table 23.2.
1 Dielectric Materials: Low-Frequency Properties
1.1 General Dielectric Properties
1.1.1 Density
The density of a substance is defined as the mass per unit volume of the substance
where V is the volume occupied by a mass m. The density is thus a measure of the volume concentration of mass.
1.1.2 Mohs Hardness Scale
In 1832, Mohs introduced a hardness scale ranging from 1 to 10, based on ten minerals:
-
1.
Talc, Mg3H2SiO12
-
2.
Gypsum, CaSO4 ⋅ 2H2O
-
3.
Iceland spar, CaCO3
-
4.
Fluorite, CaF2
-
5.
Apatite, Ca5F(PO4)3
-
6.
Orthoclase, KAlSi3O8
-
7.
Quartz, SiO2
-
8.
Topaz, Al2F2SiO4
-
9.
Corundum, Al2O3
-
10.
Diamond, C.
1.1.3 Thermal Conductivity
A temperature gradient between different parts of a solid causes a flow of heat. In an isotropic medium, the heat flux of thermal energy h (i. e., the heat transfer rate per unit area normal to the direction of heat flow) is given by
where κ is the thermal conductivity. In a crystal, this expression is replaced by
Here κij is the thermal-conductivity tensor. Note that other notations are also used in the literature, e. g., κ ≡ λ or κ ≡ k.
1.2 Static Dielectric Constant (Low-Frequency)
In isotropic and cubic dielectric materials, the electric displacement field D, the electric field E, and the polarization P are connected by the relation
where \(\varepsilon_{0}={\mathrm{8.854\times 10^{-12}}}\,{\mathrm{C/(V{\,}m)}}\) is the dielectric constant (or permittivity) of free space (vacuum), and χ is the dielectric susceptibility. The relative dielectric constant of the material is defined as
and therefore (23.4) becomes
In anisotropic crystals, these equations should be written in tensor form
The following relations are valid
Note that other notations are also used in the literature, e. g., ε ≡ εr, or ε ≡ κ and ε0 ≡ κ0.
1.3 Dissipation Factor
The capacitance C of a capacitor filled with a dielectric is
where A is the area of the two parallel plates and d is the spacing between them. For a lossy dielectric the relative dielectric constant ε can be represented in a complex form
The imaginary part is the frequency-dependent conductivity
where ω is the frequency. The dissipation factor (or loss tangent) is defined as
and in anisotropic crystals
The quality factor Q of the dielectric is the reciprocal of the dissipation factor
1.4 Elasticity
Hooke's law states that for sufficiently small deformations the strain is directly proportional to the stress. Thus the strain tensor S and the stress tensor T obey the relation
where sijkl is called the elastic compliance constant (or compliance, or elastic constant). The elastic stiffness constant (or stiffness, or Young's modulus) is the reciprocal tensor
and for the stress tensor we have
In the matrix notation for the elastic compliance and stiffness, we have
where
and
For relations between tensor and matrix notation, see Table 23.3. The sound velocity v s m n in the direction mn in a crystal is given by
1.5 Piezoelectricity
The phenomenon of the development of an electric moment Pi if a stress Tjk is applied to a crystal is called the direct piezoelectric effect
where dijk is the piezoelectric strain tensor (or the piezoelectric moduli). The relation dijk = dikj reduces the number of independent tensor components to 18. The matrix notation is introduced for the piezoelectric strain as follows
and thus
The relations between jk and n are presented in Table 23.3.
The converse piezoelectric effect is described by
and, correspondingly,
2 Optical Materials: High-Frequency Properties
2.1 Crystal Optics: General
The dielectric properties of a medium at optical frequencies are given by
where ε0 is the dielectric constant of free space and ε is the relative dielectric constant of the material. From Maxwell's equations, the velocity of propagation of electromagnetic waves through the medium is given by
where c is the velocity in vacuum (the relative magnetic permeability is taken as 1). The refractive index \(n=c/v\) is therefore \(n=\sqrt{\varepsilon}\).
In an anisotropic medium
In this general case, two waves of different velocity may propagate through the crystal. The relative dielectric impermeabilities are defined as the reciprocals of the principal dielectric constants
2.2 Photoelastic Effect
The photoelastic effect is the effect in which a change of the refractive index is caused by stress. The changes in the relative dielectric impermeabilities are
where the qijkl are the piezooptic coefficients. The photoelastic effect can also be expressed in terms of the stress
where the pijrs = qijklcklrs are the (dimensionless) elastooptic coefficients. In matrix notation,
Note that qmn = qijkl when n = 1,2, or 3 and qmn = 2qijkl when n = 4,5, or 6; pmn = pijrs (Table 23.3).
2.3 Electrooptic Effect
The electrooptic effect is the effect in which a change in the refractive index of a crystal is produced by an electric field
where a and b are constants and n0 is the refractive index at E0 = 0. The linear electrooptic effect (Pockels effect) is due to the first-order term aE0. In isotropic dielectrics and in crystals with a center of symmetry, a = 0, and only the second-order term bE 20 and higher even-order terms exist (Kerr effect).
The changes in the relative dielectric impermeabilities are
where the rijk are the electrooptic coefficients. Since rijk = rjik, the number of independent tensor components is 18, and the above formula can be written in matrix notation (Table 23.3)
2.4 Nonlinear Optical Effects
The dielectric polarization P is related to the electromagnetic field E at optical frequencies by the material equation of the medium
where \(\chi^{(1)}=n^{2}-1\) is the linear dielectric susceptibility, and χ(2) , χ(3), etc. are the nonlinear dielectric susceptibilities.
The Miller delta formulation is
where the Miller coefficient
has a small dispersion and is almost constant for a wide range of crystals.
For anisotropic media, the coefficients χ(1) and χ(2) are, in general, second- and third-rank tensors, respectively. In practice, the tensor
is used instead of χijk. Usually the plane representation of dijk in the form dil is used; the relations between jk and l are presented in Table 23.3.
The Kleinman symmetry conditions
are valid in the case of no dispersion of the electronic nonlinear polarizability.
The following three-wave interactions in crystals with a square nonlinearity (χ(2) ≠ 0) are possible:
-
Second-harmonic generation (GlossaryTerm
SHG
), \(\omega+\omega=2\omega\) -
Sum frequency generation (GlossaryTerm
SFG
) or up-conversion, \(\omega_{1}+\omega_{2}=\omega_{3}\) -
Difference frequency generation (GlossaryTerm
DFG
) or down-conversion, \(\omega_{3}-\omega_{2}=\omega_{1}\) -
Optical parametric oscillation (GlossaryTerm
OPO
), \(\omega_{3}=\omega_{2}+\omega_{1}\).
For efficient frequency conversion, the phase-matching condition \(\boldsymbol{k}_{1}+\boldsymbol{k}_{2}=\boldsymbol{k}_{3}\), where the ki are the wave vectors for ω1, ω2, and ω3, respectively, must be satisfied. Two types of phase matching can be defined
and
These can be represented with a shortened notation as follows
In the shortened notation (\(\text{ooe},\text{eoe},{\ldots}\)), the frequencies satisfy the condition \(\omega_{1}<\omega_{2}<\omega_{3}\), i. e., the first symbol refers to the longest-wavelength radiation, and the last symbol refers to the shortest-wavelength radiation. Here the ordinary beam, or o-beam is the beam with its polarization normal to the principal plane of the crystal, i. e., the plane containing the wave vector k and the crystallophysical axis Z (or the optical axis, for uniaxial crystals). The extraordinary beam, or e-beam is the beam with its polarization in the principal plane. The third-order term χ(3) is responsible for the optical Kerr effect.
2.4.1 Uniaxial Crystals
For uniaxial crystals, the difference between the refractive indices of the ordinary and extraordinary beams, the birefringence Δn, is zero along the optical axis (the crystallophysical axis Z) and maximum in a direction normal to this axis. The refractive index for the ordinary beam does not depend on the direction of propagation. However, the refractive index for the extraordinary beam ne(θ), is a function of the polar angle θ between the Z axis and the vector k
where no and ne are the refractive indices of the ordinary and extraordinary beams, respectively in the plane normal to the Z axis, and are termed the principal values. If no > ne the crystal is called negative, and if no < ne it is called positive. For the o-beam, the indicatrix of the refractive indices is a sphere with radius no, and for the e-beam it is an ellipsoid of rotation with semiaxes no and ne. In the crystal, in general, the beam is divided into two beams with orthogonal polarizations; the angle between these beams ρ is the birefringence (or walk-off) angle.
Equations for calculating phase-matching angles in uniaxial crystals are given in [23.1, 23.2, 23.3, 23.4].
2.4.2 Biaxial Crystals
For biaxial crystals, the optical indicatrix is a bilayer surface with four points of interlayer contact, which correspond to the directions of the two optical axes. In the simple case of light propagation in the principal planes XY, YZ, and XZ, the dependences of the refractive indices on the direction of light propagation are represented by a combination of an ellipse and a circle. Thus, in the principal planes, a biaxial crystal can be considered as a uniaxial crystal; for example, a biaxial crystal with \(n_{Z}> n_{Y}> n_{X}\) in the XY plane is similar to a negative uniaxial crystal with no = nZ
where φ is the azimutal angle. Equations for calculating phase-matching angles for propagation in the principal planes of biaxial crystals are given in [23.3, 23.4, 23.5, 23.6].
3 Guidelines for Use of Tables
Tables 23.5–23.23 are arranged according to piezoelectric classes in order of decreasing symmetry (Table 23.4 ), and alphabetically within each class. They contain a number of columns placed on two pages, even and odd. The following properties are presented for each dielectric material: density ϱ, Mohs hardness, thermal conductivity κ, static dielectric constant εij, dissipation factor tanδ at various temperatures and frequencies, elastic stiffness cmn, elastic compliance smn (for isotropic and cubic materials only), piezoelectric strain tensor din, elastooptic tensor pmn, electrooptic coefficients rmk (the latter two at 633 nm unless otherwise stated), optical transparency range, temperature variation of the refractive indices dn ∕ dT, refractive indices n (the latter two at 1.064 μm unless otherwise stated), dispersion relations (Sellmeier equations), second-order nonlinear dielectric susceptibility dij, and third-order nonlinear dielectric susceptibility χ (3) i j k (for isotropic and cubic materials only) (the latter two at 1.064 μm unless otherwise stated). For isotropic materials, the two-photon absorption coefficient β is also included.
The numerical values of the elastic and elastooptic constants are often averages of three or more measurements, as presented in [23.10, 23.11, 23.7, 23.8, 23.9]. In such cases, the corresponding Landolt–Börnstein volume is cited together with the most reliable (latest) reference. The standard deviation of the averaged value is given in parentheses. Vertical bars ∥ mean the modulus of the corresponding quantity. The absolute scale for the second-order nonlinear susceptibilities of crystals is based on [23.12, 23.13, 23.14]. The second-order susceptibilities for all crystals measured relative to a standard crystal have been recalculated accordingly. In particular, all previous measurements relative to KDP and quartz have been normalized to \(d_{36}\,(\text{KDP})={\mathrm{0.39}}\,{\mathrm{pm/V}}\) and \(d_{11}\,(\mathrm{SiO_{2}})={\mathrm{0.30}}\,{\mathrm{pm/V}}\). These data lead to an accurate, self-consistent set of absolute second-order nonlinear coefficients [23.14]. All numerical data are for room temperature (300 K) and in SI units.
4 Tables of Numerical Data for Dielectrics and Electrooptics
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Gurzadyan, G.G., Tzankov, P. (2018). Dielectrics and Electrooptics. In: Warlimont, H., Martienssen, W. (eds) Springer Handbook of Materials Data. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-69743-7_23
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