Abstract
In this study we present a Chemical Vapor Deposition (CVD) process simulator based on the sparse field method for solving the level set equations. An accurate and efficient tool for tracking the CVD profile evolution is developed, which includes different physical effects of direct deposition and angle dependent ion-induced deposition as well as re-deposition. The simulation results shows that the deposition profiles agree well with the experiment for different opening sizes and various micro structures. It also provides the evidence that this approach is able to describe the complex topographical evolution for PECVD/LPCVD processes.
Access provided by Autonomous University of Puebla. Download to read the full chapter text
Chapter PDF
Similar content being viewed by others
References
Burke A, Braeckelmann G, Manger D, Eisenbraun E,Kaloyeros AE. McVittie, J P.et.al J. Appl. Phys 82 (9) (1997)
J. C. Rey, L.-Y. Cheng, J. P. McVittie, and K. C. Saraswat, J. Vac. Sci. Technol. A 9, 1083 (1991)
Whitaker T.R, International Journal of Computer Vision 29(3), 203 (1998)
Hsiau Z.K, Kan E.C,McVittie J.P,Dutton R.W, IEEE transactions on electron devices, 44,. 9,(1997)
J.P. McVittie, J.C. Rey, L.Y. Cheng, M.M. IslamRaja and K.C. Saraswat, IEDM 917 - 920 (1990)
Zhou R,Zhang H,Hao Y,Wang Y,J.Micromech. Microeng. 14 851 (2004)
Adalsteinsson D,Sethian J.A,Journal of Computational Physics 120,128 (1995)
Sussman M, Fatemi E, SIAM J. Sci. Comput., 20(4), 1165 (1999)
Sethian JA, Level Set Methods and Fast Marching Methods, Cambridge University Press (1996)
Acknowledgments
This work was supported by research grant from NSFC No. 51075073, China and Department of Science and Technology (Project No. SR/S3/MERC/072/2011), New Delhi, India.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2014 Springer International Publishing Switzerland
About this paper
Cite this paper
Singh, S.S., Li, Y., Xing, Y., Pal, P. (2014). The Application of Level Set Method for Simulation of PECVD/LPCVD Processes. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_60
Download citation
DOI: https://doi.org/10.1007/978-3-319-03002-9_60
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-03001-2
Online ISBN: 978-3-319-03002-9
eBook Packages: Earth and Environmental ScienceEarth and Environmental Science (R0)