Abstract
Semiconductor physics and devices have emerged from early studies on the conductivity of metal sulfides in the nineteenth century and experienced a strong progress since the middle of the twentieth century. This introductive chapter briefly highlights a couple of historic milestones and illustrates some general properties of semiconductors. Then the fabrication of semiconductors is described, pointing out the driving force of crystal growth, thermodynamics, and kinetics of nucleation and the occurrence of different growth modes. Various methods for growing bulk single crystals from the liquid and the vapor phase are introduced, and the techniques of liquid-phase epitaxy, molecular-beam epitaxy, and metalorganic vapor-phase epitaxy for the fabrication of thin layers and sharp interfaces are pointed out.
Karl W. Böer: deceased.
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Notes
- 1.
The word itself was rediscovered at this time. It was actually used much earlier (Ebert 1789) in approximately the correct context, and then again 62 years later by Bromme (1851). However, even after its more recent introduction, serious doubts were voiced as to whether even today’s most prominent semiconductor, silicon, would not better be described as a metal (Wilson 1931).
- 2.
This age was also termed the silicon age (Queisser 1985), in reference to the material now most widely used for semiconducting devices. Despite the great abundance in the earth’s crust (27.5% surpassed only by oxygen with 50.5%, and followed by aluminum with 7.3% and iron with 3.4%), and its dominance as the material of choice in the semiconductor industry, other semiconductor materials (crystalline or amorphous) are now being identified which may show even greater potential in the future. The global semiconductor industry with a $440.4 billion market in 2020 and an expected growth to $551 billion in 2021 (source: World Semiconductor Trade Statistics, WSTS (2021)) is a key driver for economic growth, with an annual (long-term) average growth on the order of 10%.
- 3.
The resistance is used here rather than the material resistivity because of the inhomogeneity of the electronic transport through most of the devices.
- 4.
G is used instead of U, because control of temperature T and pressure P is more convenient than that of the parameters entropy S and volume V.
- 5.
The number of coexisting phases is specified by Gibbs phase rule.
- 6.
The phenomenon should not be confused with the size effect of melting-point depression in nanoscale materials that originates from a large surface-to-volume ratio.
- 7.
After completion of a step, a new kink must nucleate at the step for advancement, and after completion of an entire layer, a new (two-dimensional) nucleus with a step at its perimeter must be created. Particularly, the latter leads to a slow growth rate of flat surfaces.
- 8.
A screw dislocation hitting a surface creates a steadily reproduced kink site at its core, enabling a spiral growth around the core that is much faster than growth on a planar surface. Under suitable conditions, a fine needle may form with an axial screw-dislocation line.
- 9.
- 10.
The differentiation between physical and chemical process is often not well defined, and CVT is also used for closed systems.
- 11.
Organic materials interesting for semiconductor applications are treated in Sect. 1.5 in Chap. 3, “The Structure of Semiconductors.”
- 12.
For example, in MBE of GaAs, the sticking coefficient of As2,\( {s}_{{\mathrm{As}}_2} \), increases linearly with the (independent) Ga adsorption rate and reaches unity when flux(Ga) = 2 × flux(As2).
- 13.
Similar to MBE
- 14.
The difference in the maximum growth rates in Fig. 15 originates from effects of the reactor geometry.
References
Adams WG, Day RE (1876) The action of light on selenium. Proc R Soc (Lond) 25:113
AMD (2021) image accessible at https://library.amd.com/media/?mediaId=DE133045-FEF1-4B57-A4741EC209817C03
Arthur JR Jr (1968) Interaction of Ga and As2 molecular beams with GaAs surfaces. J Appl Phys 39:4032
Asahi H, Horikoshi Y (2019) Molecular beam epitaxy. Wiley, Hoboken
Asahi T, Kainosho K, Kohiro K, Noda A, Sato K, Oda O (2003) Chapter 15: Growth of III-V and II-VI single crystals. In: Scheel HJ, Fukuda T (eds) Crystal growth technology. Wiley, Chichester
Astles MG (1990) Liquid-phase epitaxial growth of III-V compound semiconductor materials and their device applications. Adam Hilger, Bristol
Ayers JE (2007) Heteroepitaxy of semiconductors: theory, growth, and characterization. CRC, Boca Raton
Bell Labs (1947) see: Bo Lojek (2007) History of semiconductor engineering. Springer, Berlin
Bergmann L (1931) Über eine neue Selen-Sperrschicht Photozelle. Phys Z 32:286 (On novel selenium-junction photo cells, in German)
Bergmann L (1934) Phys Z 35:450
Binnewies M, Glaum R, Schmidt M, Schmidt P (2012) Chemical vapor transport reactions. de Gruyter, Berlin/Boston
Braun F (1874) Über die Stromleitung durch Schwefelmetalle. Ann Phys Chem 153:556 (On the current conduction in sulfur metals, in German)
Brice JC (1986) Crystal growth processes. Halstead Press, New York
Bridgman PW (1923) The compressibility of thirty metals as a function of pressure and temperature. Proc Am Acad Arts Sci (Boston) 58:165; Ibid. 60:303(1925)
Bromme T (1851) Atlas der Physik der Welt. Krais & Hoffmann, Stuttgart (Physics atlas of the world, in German)
Buckley HE (1951) Crystal growth. Wiley, New York
Capper P, Mauk M (2007) Liquid phase epitaxy of electronic, optical and optoelectronic materials. Wiley, Chichester
Cho AY (1971) Film deposition by molecular-beam techniques. J Vac Sci Technol 8:S31
Czochralski J (1918) Ein neues Verfahren zur Messung der Kristallisationsgeschwindigkeit der Metalle. Z Phys Chemie 92:219 (New method for measuring the crystallization speed of metals, in German)
Dauelsberg M, Talalaev R (2020) Progress in modeling of III-nitride MOVPE. Prog Crystal Growth & Character Mater 66:100486
Dhanaraj G, Byrappa K, Prasad V, Dudley M (eds) (2010) Springer handbook of crystal growth. Springer, New York
Ebert JJ (1789) Unterweisung in den Anfangsgründen der Naturlehre. Chr. Gottlieb Hertel, Leipzig (Briefing in the elements of natural sciences, in German)
Faraday M (1833) Experimental researches in electricity, series IV. Bernard Quaritch, London, p 433
Forrest SR (2020) Organic electronics: foundations to applications. Oxford University Press, Oxford
Gault WA, Monberg EM, Clemans JE (1986) A novel application of the vertical gradient freeze method to the growth of high quality III–V crystals. J Cryst Growth 74:491
Gibbs JW (1874) On the equilibrium of heterogeneous substances. Trans Conn Acad Arts Sci 3:108–248, 343–524, (1874–1878). Reproduced in both The Scientific Papers (1906), pp 55–353 and The Collected Works of J. Willard Gibbs, vol 2, Longmans, Green and Co., New York (1928), p. 267
Giess EA, Ghez R (1975) Liquid-phase epitaxy. In: Matthews JW (ed) Epitaxial growth part B. Academic Press, New York, pp 183–213
Goodman CHL (1978) Crystal growth: theory and techniques. Plenum Press, New York
Grondahl LO (1926/1932) see: note on the discovery of the photoelectric effect in a copper-oxide rectifier. Phys Rev 40:635
Günther KG (1958) Aufdampfschichten aus halbleitenden III-V-Verbindungen. Z Naturforschg 13a:1081 (Vapor deposition of semiconducting III-V compound layers, in German)
Hermann MA, Richter W, Sitter H (2004) Epitaxy. Springer, Berlin
Hittorf JW (1851) Über das elektrische Leitvermögen des Schwefelsilbers und des Halbschwefelkupfers. Ann Phys Lpz 84:1 (On the electric conductivity of sulfur silver and semi-sulfur copper, in German)
Holden A, Morrison PS (1982) Crystals and crystal growing. MIT Press, Cambridge, MA
Hurle DTJ (1994) Handbook of crystal growth vol. 2a, bulk crystal growth, basic techniques. North Holland, Amsterdam
Irvine S, Capper P (eds) (2020) Metalorganic vapor phase epitaxy (MOVPE). Wiley, Hoboken
Jensen KF (1994) Transport phenomena in vapor phase epitaxy reactors. In: Hurle DRT (ed) Handbook of crystal growth. Elsevier, Amsterdam, pp 541–599
Jones AC, O’Brien P (1997) CVD of compound semiconductors. VCH, Weinheim
Joyce BA, Vvedenski DD, Foxon CT (1994) Growth mechanisms in MBE and CBE of III-V compounds. In: Mahajan S (ed) Handbook on semiconductors. Elsevier, Amsterdam
Kloc C, Siegrist T, Pflaum J (2010) Growth of single-crystal organic semiconductors. In: Dhanaraj G, Byrappa K, Prasad V, Dudley M (eds) Springer handbook of crystal growth. Springer, New York
Königsberger T, Weiss T (1911) Über die thermoelektrischen Effekte (Thermokräfte, Thomsonwärme) und die Wärmeleitung in einigen Elementen und Verbindungen und über die experimentelle Prüfung der Elektronentheorien. Ann Phys 35:1. (On the thermoelectrical effects and heat conductivity in some elements and compounds and on the experimental examination of the electron theory, in German)
Kyropoulos S (1926) Ein Verfahren zur Herstellung großer Kristalle. Z Anorg Allg Chemie 154:308 (A method for the fabrication of large crystals, in German)
Kyropoulos S (1930) Dielektrizitätskonstanten regulärer Kristalle. Z Phys 63:849 (Dielectric constants of normal crystals, in German)
Laudise RA (1970) The growth of single crystals. Prentice Hall, Englewood Cliffs
Manasevit HM, Simpson WI (1968) The use of metal-organics in the preparation of semiconductor materials on insulating substrates: I. Epitaxial III-V gallium compounds. J Electrochem Soc 12:66C
Manasevit HM (1972) The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substrates. J Crystal Growth 13/14:306
Markov IV (2017) Crystal growth for beginners, 3rd edn. World Scientific, Singapore
Metz EAP, Miller RC, Mazelsky R (1962) A technique for pulling single crystals of volatile materials. J Appl Phys 33:2016
Miederer WG, Ziegler, Dötzer R (1962) Verfahren zum tiegelfreien Herstellen von Galliumarsenidstäben aus Galliumalkylen und Arsenverbindungen bei niedrigen Temperaturen. German Patent 1,176,102, filed 25.9.1962; and: Method of crucible-free production of gallium arsenide rods from alkyl galliums and arsenic compounds at low temperatures. US Patent 3,226,270, filed 24.9.1963
Miller RJ, Bachmann CH (1958) Production of cadmium sulfide crystals by coevaporation in a vacuum. J Appl Phys 29:1277
Mooser E, Pearson WB (1956) The chemical bond in semiconductors. J Electron 1:629
Mountziaris TJ, Jensen KF (1991) Gas-phase and surface reaction mechanisms in MOCVD of GaAs with trimethyl-gallium and arsine. J Electrochem Soc 138:2426
Ovshinsky SR (1968) Reversible electrical switching phenomena in disordered structures. Phys Rev Lett 21:1450
Pamplin B (1980) Crystal growth, 2nd edn. Pergamon, New York
Parker EHC (ed) (1985) The technology and physics of molecular beam epitaxy. Plenum Press, New York
Pohl UW (2020) Epitaxy of semiconductors, 2nd edn. Springer Nature, Switzerland
Queisser HJ (1985) Kristallene Krisen. Piper, München English: The Conquest of the Microchip. Harvard University Press, Cambridge MA
Reep DH, Ghandhi SK (1983) Deposition of GaAs epitaxial layers by organometallic CVD. J Electrochem Soc 130:675
Scheel HJ, Fukuda T (eds) (2003) Crystal growth technology. Wiley, Chichester
Schuster A (1874) On unilateral conductivity. Philos Mag 48:251
Seebeck TJ (1822) Magnetische Polarisation der Metalle und Erze durch Temperaturdifferenz. Abhandl Deut Akad Wiss. Berlin, p 265. (Magnetic polarization of metals and ore by temperature difference, in German)
Small MB, Giess EA, Ghez R (1994) Liquid-phase epitaxy. In: Hurle DTJ (ed) Handbook of crystal growth, vol 3. Elsevier, Amsterdam, pp 223–253
Smith W (1873) Effect of light on selenium during the passage of an electric current. Nature 7:303
Stringfellow GB (1999) Organometallic vapor-phase epitaxy, 2nd edn. Academic Press, New York
Sze SM, Ng KK (2007) Physics of semiconductor devices, 3rd edn. Wiley, Hoboken
Venables JA, Spiller GDT, Hanbrücken M (1984) Nucleation and growth of thin films. Rep Prog Phys 47:399
Verneuil AV (1902) Production artificielle du rubis par fusion (Artificial production of ruby by fusion, in French) C R Acad Sci Paris C 135:791; La synthese du rubis (Synthesis of ruby, in French) Ann Chim et Phys (Paris) 3:20 (1904)
Volmer M (1939) Kinetik der Phasenbildung. Theodor Steinkopf, Dresden (Kinetics of phase formation, in German)
Volmer M, Weber A (1926) Tröpfchenbildung in Dämpfen. Z Phys Chem 119:227 (Formation of droplets in vapor, in German)
Wanklyn BMR (1974) Practical aspects of flux growth by spontaneous nucleation. In: Pamplin BR (ed) Crystal growth, vol 1. Pergamon, Oxford, pp 217–288
Wilson AH (1931) The theory of electronic semi-conductors. Proc R Soc (Lond) Ser A 133:458
WSTS (2021) accessible at https://www.wsts.org/esraCMS/extension/media/f/WST/5145/WSTS_nr-2021_08.pdf
Wulff G (1901) Zur Frage der Geschwindigkeit des Wachstums und der Auflösung der Kristallflächen, Z. Kristallographie 34:449 (On the question of growth velocity and the decomposition of crystal faces, in German)
Young T (1805) An essay on the cohesion of fluids. Phil Trans R Soc Lond 95:65
Zachariasen WH (1932) The atomic arrangement in glass. J Am Chem Soc 54:3841
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Böer, K.W., Pohl, U.W. (2023). Properties and Growth of Semiconductors. In: Semiconductor Physics. Springer, Cham. https://doi.org/10.1007/978-3-031-18286-0_1
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